BSC0921NDIATMA1 vs BSC097N06NSATMA1 비교

다음의 상세 나란히 비교: BSC0921NDIATMA1 제조: Infineon 및 BSC097N06NSATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BSC0921NDIATMA1 BSC097N06NSATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.68 $0.38
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 25V (N-channel) OptiMOS 5 (Trench)
Configuration Dual N-Channel MOSFET Array —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) 17 A (per channel) —
Pulsed Drain Current (IDM) 31 A (per channel, package-limited) [DATA_NEEDED: IDM peak value]
Total Power Dissipation (PD) 1 W —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] —
Gate Charge (Qg) Ultra-low (OptiMOS 25V family characteristic) —
Output Charge (Qoss) Ultra-low (OptiMOS 25V family characteristic) —
패키지 PG-TISON-8 (8-pin, exposed pad) —
실장 유형 Surface Mount Surface Mount
동작 온도 -55C to +150C (junction) —
RoHS 상태 Compliant Compliant
MSL 레벨 1 (per Infineon OptiMOS family) 1 (Unlimited)
Primary Application Synchronous buck converters, VRMs, POL regulators —
Series — OptiMOS 5
Part Status — Active
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Tc=25C — 46 A
Continuous Drain Current (ID) at Ta=25C — [DATA_NEEDED: ID at Ta=25C PCB-mounted]
RDS(on) max at VGS=10 V — 9.7 mOhm
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
Gate Charge (Qg typ) — [DATA_NEEDED: total gate charge Qg]
Power Dissipation at Ta=25C — 2.5 W
Power Dissipation at Tc=25C — 36 W
동작 접합 온도 — -55C to +150C
패키지 / 케이스 — PG-TDSON-8-6 (SuperSO8 5x6 mm)
Avalanche Rated — Yes (EAS per datasheet)

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