BSC0921NDIATMA1 vs BSC097N06NSATMA1 Comparison
Detailed side-by-side comparison of BSC0921NDIATMA1 by Infineon and BSC097N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0921NDIATMA1
BSC0921NDIATMA1 - Dual N-Ch 30V OptiMOS 25V MOSFET | Infineon
BSC0921NDIATMA1 β Active
Specification Comparison
| Parameter | BSC0921NDIATMA1 | BSC097N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.68 | $0.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 25V (N-channel) | OptiMOS 5 (Trench) |
| Configuration | Dual N-Channel MOSFET Array | β |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) | 17 A (per channel) | β |
| Pulsed Drain Current (IDM) | 31 A (per channel, package-limited) | [DATA_NEEDED: IDM peak value] |
| Total Power Dissipation (PD) | 1 W | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] | β |
| Gate Charge (Qg) | Ultra-low (OptiMOS 25V family characteristic) | β |
| Output Charge (Qoss) | Ultra-low (OptiMOS 25V family characteristic) | β |
| Package | PG-TISON-8 (8-pin, exposed pad) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +150C (junction) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per Infineon OptiMOS family) | 1 (Unlimited) |
| Primary Application | Synchronous buck converters, VRMs, POL regulators | β |
| Series | β | OptiMOS 5 |
| Part Status | β | Active |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at Tc=25C | β | 46 A |
| Continuous Drain Current (ID) at Ta=25C | β | [DATA_NEEDED: ID at Ta=25C PCB-mounted] |
| RDS(on) max at VGS=10 V | β | 9.7 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | β | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg typ) | β | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation at Ta=25C | β | 2.5 W |
| Power Dissipation at Tc=25C | β | 36 W |
| Operating Junction Temperature | β | -55C to +150C |
| Package / Case | β | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Avalanche Rated | β | Yes (EAS per datasheet) |