BSC120N03LSGATMA1 vs BSC0901NSATMA1 비교

다음의 상세 나란히 비교: BSC120N03LSGATMA1 제조: Infineon 및 BSC0901NSATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BSC120N03LSGATMA1 BSC0901NSATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.36 $0.78
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta=25C 12 A —
Continuous Drain Current (ID) at Tc=25C 39 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max +/-20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: VGS(th)]
On-State Resistance RDS(on) at VGS=10V 12 mOhm (typical) —
On-State Resistance RDS(on) at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 28 W —
동작 온도 범위 -55C to +150C (TJ) -55C to +150C
패키지 PG-TDSON-8-5 (SuperSO-8, 5x6 mm) TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm
실장 유형 Surface Mount Surface Mount
MSL 레벨 1 (per JEDEC J-STD-020) —
RoHS 상태 Compliant Compliant
Part Family — OptiMOS 30V
Technology — N-Channel Trench MOSFET (OptiMOS)
Drain-to-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at Tc — 100 A
Continuous Drain Current (ID) at Ta — 28 A
On-State Resistance RDS(on) Max at VGS=10V — 1.9 mOhm
On-State Resistance RDS(on) Typ at VGS=10V — [DATA_NEEDED: RDS(on) typical]
Gate Charge (Qg) Typ — [DATA_NEEDED: Qg total]
Avalanche Energy (EAS) — 80 mJ
Power Dissipation (PD) at Tc — 69 W
Power Dissipation (PD) at Ta — 2.5 W
습도 민감도 레벨 (MSL) — 1
Built-in Body Diode — Yes
Configuration — Single N-Channel with Built-in Diode

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