BSC120N03LSGATMA1 vs BSC0901NSATMA1 Comparison
Detailed side-by-side comparison of BSC120N03LSGATMA1 by Infineon and BSC0901NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC120N03LSGATMA1 - 30V 39A OptiMOS 3 N-Channel MOSFET | Infineon
BSC120N03LSGATMA1 β Active
Specification Comparison
| Parameter | BSC120N03LSGATMA1 | BSC0901NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at Ta=25C | 12 A | β |
| Continuous Drain Current (ID) at Tc=25C | 39 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (VGS) max | +/-20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th)] |
| On-State Resistance RDS(on) at VGS=10V | 12 mOhm (typical) | β |
| On-State Resistance RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 28 W | β |
| Operating Temperature Range | -55C to +150C (TJ) | -55C to +150C |
| Package | PG-TDSON-8-5 (SuperSO-8, 5x6 mm) | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | Compliant |
| Part Family | β | OptiMOS 30V |
| Technology | β | N-Channel Trench MOSFET (OptiMOS) |
| Drain-to-Source Voltage (VDS) Max | β | 30 V |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| Continuous Drain Current (ID) at Ta | β | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | β | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | β | [DATA_NEEDED: RDS(on) typical] |
| Gate Charge (Qg) Typ | β | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | β | 80 mJ |
| Power Dissipation (PD) at Tc | β | 69 W |
| Power Dissipation (PD) at Ta | β | 2.5 W |
| Moisture Sensitivity Level (MSL) | β | 1 |
| Built-in Body Diode | β | Yes |
| Configuration | β | Single N-Channel with Built-in Diode |