BSC190N15NS3GATMA1 vs IPP120N08S403AKSA1 비교
다음의 상세 나란히 비교: BSC190N15NS3GATMA1 제조: Infineon 및 IPP120N08S403AKSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
BSC190N15NS3GATMA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
BSC190N15NS3GATMA1 ✓ 활성
사양 비교
| 파라미터 | BSC190N15NS3GATMA1 | IPP120N08S403AKSA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.98 | $2.15 |
| Technology | OptiMOS 3 (N-Channel) | — |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at Tc=25C | 50 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 3.5 V | 4 V max |
| On-Resistance RDS(on) max at VGS=10V | 19 mOhm | — |
| On-Resistance RDS(on) typ at VGS=10V | [DATA_NEEDED: RDS(on) typical at 10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | 167 nC |
| Power Dissipation (PD) at Tc=25C | 125 W | — |
| 동작 온도 범위 | -55 C to +150 C | — |
| 패키지 | PG-TDSON-8-1 (TDSON-8 EP) | TO-220-3-1 (PG-TO220-3-1) |
| 실장 유형 | Surface Mount | Through Hole |
| RoHS 상태 | Compliant | Compliant (Green Product) |
| MSL 레벨 | 1 | MSL1 (peak reflow up to 260 C) |
| Drain-to-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc) | — | 120 A |
| Pulsed Drain Current (bondwire-limited) | — | 245 A at 25 C |
| Maximum Power Dissipation (Ptot) | — | 278 W (Tc) |
| On-State Resistance (RDS(on)) | — | 2.8 mOhm typical at VGS=10 V, ID=100 A |
| Input Capacitance (Ciss) | — | 11550 pF |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 0.54 K/W |
| 동작 접합 온도 | — | -55 C to +175 C |
| Automotive Qualification | — | AEC-Q101 qualified |
| Avalanche Rating | — | 100% avalanche-tested |
| Channel Type | — | N-Channel enhancement mode |
| Technology Family | — | OptiMOS |