BSD235CH6327XTSA1 vs BSP315PH6327XTSA1 비교
다음의 상세 나란히 비교: BSD235CH6327XTSA1 제조: Infineon 및 BSP315PH6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
BSD235CH6327XTSA1 - 20V Complementary N+P MOSFET | Infineon OptiMOS™
BSD235CH6327XTSA1 ✓ 활성
사양 비교
| 파라미터 | BSD235CH6327XTSA1 | BSP315PH6327XTSA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.12 | $0.31 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS™ | — |
| Configuration | N+P complementary dual MOSFET | — |
| Drain-to-Source Voltage (VDS) | 20 V | — |
| N-Channel Continuous Drain Current (ID) | 950 mA | — |
| P-Channel Continuous Drain Current (ID) | 530 mA (negative polarity) | — |
| Total Power Dissipation (Ptot) | 500 mW | — |
| Package Type | PG-SOT363-6-1 (SOT-363, 6-pin) | — |
| 실장 유형 | Surface Mount | Surface Mount |
| Technology | OptiMOS™ low-voltage | OptiMOS (enhancement mode) |
| 동작 온도 범위 | -55 °C to +150 °C (junction) | -55 C to +150 C (junction) |
| Polarity | N-channel + P-channel | — |
| Channel Mode | Enhancement | — |
| RoHS 상태 | Compliant (lead-free) | — |
| MSL 레벨 | 1 | 1 (per JEDEC J-STD-020) |
| 핀 수 | 6 | — |
| FET Type | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -60 V |
| Continuous Drain Current (ID) | — | -1.17 A (Ta) |
| Power Dissipation (PD) | — | 1.8 W (Ta) |
| Gate-Source Voltage (VGS) | — | ±20 V (max) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10 V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| 패키지 | — | PG-SOT223-4 (SOT-223-3 pinout with exposed tab) |
| Avalanche Energy Rated | — | Yes (per datasheet) |
| Lead-Free / RoHS | — | Yes / Compliant |