BSD316SNH6327XTSA1 vs BSS214NWH6327XTSA1 비교
다음의 상세 나란히 비교: BSD316SNH6327XTSA1 제조: Infineon 및 BSS214NWH6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSD316SNH6327XTSA1 | BSS214NWH6327XTSA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.11 | $0.15 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | Small Signal N-Channel MOSFET | — |
| Polarity | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) | 1.4 A (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta=25C) | — |
| 패키지 | SOT-363 (PG-SOT363-PO), 6-pin | PG-SOT323 (SOT-323-3) |
| 실장 유형 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| Operating Mode | Enhancement-mode | — |
| Lead Plating | Pb-free (lead-free) | — |
| RoHS 상태 | Compliant | Compliant |
| MSL 레벨 | [DATA_NEEDED: MSL level] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V / 4.5V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| 동작 온도 범위 | [DATA_NEEDED: junction/ambient temperature range] | — |
| Part Number | — | BSS214NWH6327XTSA1 |
| Series | — | OptiMOS |
| FET Type | — | N-Channel |
| Technology | — | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (Vdss) | — | 20 V |
| Continuous Drain Current (Id) @ 25C | — | 1.5 A |
| Rds(on) Max @ Vgs=4.5V | — | 250 mOhm |
| Drive Voltage (Max Rds On, Min Rds On) | — | 2.5 V, 4.5 V |
| Power Dissipation (Pd) @ Ta=25C | — | 500 mW |
| 동작 온도 | — | -55C to +150C (junction) |
| Qualification | — | AEC-Q101 (Automotive) |
| Lead-Free | — | Yes |