BSF134N10NJ3GXUMA1 vs IPB024N10N5ATMA1 비교

다음의 상세 나란히 비교: BSF134N10NJ3GXUMA1 제조: Infineon 및 IPB024N10N5ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BSF134N10NJ3GXUMA1 IPB024N10N5ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.78 $1.86
Manufacturer Infineon Technologies —
Series OptiMOS 100 V —
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at TA=25°C 9 A —
Continuous Drain Current (ID) at TC=25°C 40 A —
Power Dissipation (PD) at TA=25°C 2.2 W —
Power Dissipation (PD) at TC=25°C 43 W —
패키지 MG-WDSON-2 (CanPAK M) PG-TO263-7 (D2PAK-7)
실장 유형 Surface Mount Surface Mount
Configuration Single with built-in diode —
Terminal Position Bottom —
Terminal Finish Silver Nickel —
동작 온도 범위 -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] -55C to +175C (junction)
RoHS 상태 Compliant Compliant
MSL 레벨 [DATA_NEEDED: MSL rating] 1 (unlimited floor life at <30C/85% RH)
Technology Trench-gate OptiMOS planar OptiMOS 5 N-Channel MOSFET (trench, shielded gate)
Gate Charge (Qg) [DATA_NEEDED: Qg value] —
RDS(on) at VGS=10V [DATA_NEEDED: RDS(on) max value] —
Body Diode Reverse Recovery [DATA_NEEDED: trr value] —
Continuous Drain Current (ID, TC=25C) — 180 A
Power Dissipation (PD, TC=25C) — 250 W
On-Resistance RDS(on) max @ VGS=10V — 2.4 mΩ
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) value]
Gate Charge Qg typ @ VGS=10V — [DATA_NEEDED: Qg total gate charge]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total gate charge]
Input Capacitance Ciss — [DATA_NEEDED: Ciss value]
Output Capacitance Coss — [DATA_NEEDED: Coss value]
Reverse Recovery Charge Qrr — [DATA_NEEDED: Qrr value]
Packaging — Tape & Reel (13-inch reel)
할로겐 프리 — Yes (per Infineon product family policy)

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