BSS205NH6327XTSA1 vs BSP315PH6327XTSA1 비교
다음의 상세 나란히 비교: BSS205NH6327XTSA1 제조: Infineon 및 BSP315PH6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSS205NH6327XTSA1 | BSP315PH6327XTSA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.12 | $0.31 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSS205NH6327XTSA1 | — |
| 트랜지스터 유형 | N-Channel MOSFET | — |
| 패키지 | PG-SOT23 (SC-59, TO-236-3), 3-pin | PG-SOT223-4 (SOT-223-3 pinout with exposed tab) |
| 실장 유형 | Surface Mount | Surface Mount |
| Drain-Source Voltage V<sub>DS</sub> | 20 V | — |
| Continuous Drain Current I<sub>D</sub> (Ta) | 2.5 A | — |
| Power Dissipation P<sub>D</sub> (Ta) | 500 mW | — |
| R<sub>DS(on)</sub> max (V<sub>GS</sub>=4.5 V) | 85 mΩ | — |
| Gate Threshold V<sub>GS(th)</sub> | [DATA_NEEDED: Vgs(th) typical value] | — |
| 동작 온도 범위 | -55 °C to +150 °C (junction) | -55 C to +150 C (junction) |
| Gate Drive Voltage | Logic-level compatible | — |
| Qualification | AEC-Q101 | — |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020) | — |
| Packaging | Tape & Reel (H6327) | — |
| FET Type | — | P-Channel |
| Technology | — | OptiMOS (enhancement mode) |
| Drain-Source Voltage (VDS) | — | -60 V |
| Continuous Drain Current (ID) | — | -1.17 A (Ta) |
| Power Dissipation (PD) | — | 1.8 W (Ta) |
| Gate-Source Voltage (VGS) | — | ±20 V (max) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10 V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Avalanche Energy Rated | — | Yes (per datasheet) |
| Lead-Free / RoHS | — | Yes / Compliant |
| MSL 레벨 | — | 1 (per JEDEC J-STD-020) |