BSS214NH6327XTSA1 vs BSS806NH6327XTSA1 비교
다음의 상세 나란히 비교: BSS214NH6327XTSA1 제조: Infineon 및 BSS806NH6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSS214NH6327XTSA1 | BSS806NH6327XTSA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.09 | $0.19 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 20 V | 20 V |
| Continuous Drain Current (ID) | 1.5 A (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| Drain-Source On-Resistance (RDS(on) max) | 250 mOhm at VGS = 4.5 V | 57 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max values] | 1.8 V rated (logic level) |
| Gate-Source Voltage (VGS max) | ±12 V (recommended) | — |
| Technology | OptiMOS 2 (planar N-channel) | OptiMOS 2 (trench MOSFET) |
| 패키지 | SOT-23 (PG-SOT23), 3 pins | PG-SOT23-3 (SOT-23-3) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | -55C to +150C (junction) | -55 C to +150 C (junction) |
| Qualification | AEC-Q101 (Automotive) | — |
| Lead Finish | Pb-free lead plating (matte tin) | — |
| RoHS 상태 | Compliant | Compliant (Pb-free plating) |
| MSL 레벨 | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| ESD Protection | Yes (gate ESD diode) | — |
| Continuous Drain Current (ID, Ta) | — | 2.3 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate Drive (recommended VGS) | — | 1.8 V to 10 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg] |
| Power Dissipation (PD, Ta) | — | 500 mW |
| Automotive Qualification | — | AEC-Q101 qualified |