BSS214NWH6327XTSA1 vs BSD316SNH6327XTSA1 비교
다음의 상세 나란히 비교: BSS214NWH6327XTSA1 제조: Infineon 및 BSD316SNH6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSS214NWH6327XTSA1 | BSD316SNH6327XTSA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.15 | $0.11 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSS214NWH6327XTSA1 | — |
| Series | OptiMOS | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain-to-Source Voltage (Vdss) | 20 V | — |
| Continuous Drain Current (Id) @ 25C | 1.5 A | — |
| Rds(on) Max @ Vgs=4.5V | 250 mOhm | — |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5 V, 4.5 V | — |
| Power Dissipation (Pd) @ Ta=25C | 500 mW | — |
| 패키지 | PG-SOT323 (SOT-323-3) | SOT-363 (PG-SOT363-PO), 6-pin |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 | -55C to +150C (junction) | — |
| Qualification | AEC-Q101 (Automotive) | — |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Product Family | — | Small Signal N-Channel MOSFET |
| Polarity | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) | — | 1.4 A (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta=25C) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Operating Mode | — | Enhancement-mode |
| Lead Plating | — | Pb-free (lead-free) |
| MSL 레벨 | — | [DATA_NEEDED: MSL level] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) min/typ/max] |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V / 4.5V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| 동작 온도 범위 | — | [DATA_NEEDED: junction/ambient temperature range] |