BSS316NH6327XTSA1 vs BSS306NH6327XTSA1 비교

다음의 상세 나란히 비교: BSS316NH6327XTSA1 제조: Infineon 및 BSS306NH6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
BSS306NH6327XTSA1 BSS306NH6327XTSA1 - 30V 2.3A N-Ch OptiMOS MOSFET | Infineon

BSS306NH6327XTSA1 - 30V 2.3A N-Ch OptiMOS MOSFET | Infineon

BSS306NH6327XTSA1 ✓ 활성

사양 비교

파라미터 BSS316NH6327XTSA1 BSS306NH6327XTSA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.13 $0.14
FET Type N-Channel, Enhancement Mode N-Channel
Technology OptiMOS 2 (Trench) MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at TA=25C 1.4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Drain-Source On-Resistance RDS(on) max 160 mOhm at VGS=10V, ID=1.4A —
Gate-Source Threshold Voltage VGS(th) typ 2 V at ID=3.7 uA —
Total Gate Charge (Qg) 600 pC at VGS=5 V —
Input Capacitance (Ciss) 94 pF at VDS=15 V —
Output Capacitance (Coss) [DATA_NEEDED: output capacitance] —
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: reverse transfer capacitance] —
Maximum Power Dissipation (PD) at TA=25C 500 mW —
동작 접합 온도 범위 -55 C to +150 C —
패키지 PG-SOT23 (SOT-23-3) SOT-23 (PG-SOT23), 3-pin
실장 유형 Surface Mount Surface Mount
Lead Plating Pb-free (Matte Tin) Pb-free (RoHS compliant)
MSL 레벨 MSL1 (per JEDEC J-STD-020) —
RoHS 상태 Compliant —
Automotive Qualification AEC-Q101 qualified —
Manufacturer — Infineon Technologies
Part Number — BSS306NH6327XTSA1
Part Family — BSS306N (OptiMOS Small Signal)
Continuous Drain Current (ID) — 2.3 A (Ta)
Power Dissipation (PD) — 500 mW (Ta)
RDS(on) max — [DATA_NEEDED: exact RDS(on) max value in mΩ]
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max in V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) in V]
동작 온도 — -55°C to +150°C (TJ)
Qualification — AEC-Q101 (Automotive)
Configuration — Single N-Channel, 3-pin

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