BSS306NH6327XTSA1 - 30V 2.3A N-Ch OptiMOS MOSFET | Infineon
부품 번호: BSS306NH6327XTSA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0.42 | $0.42 |
| 10 | $0.36 | $3.60 |
| 100 | $0.28 | $28.00 |
| 500 | $0.22 | $110.00 |
| 1,000 | $0.18 | $180.00 |
| 3,000 | $0.14 | $420.00 |
BSS306NH6327XTSA1 개요
A small-signal MOSFET is a low-power field-effect transistor designed for switching, level shifting, and load management in compact, high-density designs. Within the broader semiconductor taxonomy, the BSS306N sits in the discrete MOSFET category (MOSFET -> transistor -> discrete semiconductor -> semiconductor), enabling engineers to replace bipolar transistors or build efficient high-side/low-side switches where traditional BJTs would dissipate excessive heat.
Key specifications include 30 V drain-source voltage (VDS), 2.3 A continuous drain current (ID) at Ta, an on-resistance of approximately 57 mΩ typical, and low gate charge for high-frequency operation. The 3-pin SOT-23 package (PG-SOT23) is one of the industry's most common small-outline footprints, allowing direct drop-in compatibility with hundreds of N-channel MOSFETs.
Technically, the BSS306N leverages Infineon's OptiMOS technology, providing an optimized silicon trench cell structure that minimizes conduction and switching losses. The standard 2.5 V gate-threshold range allows direct logic-level drive from microcontrollers and ASICs without additional level-shifting circuitry.
Typical applications include load switching in portable electronics, power management in battery-powered systems, signal routing in industrial automation, automotive ECUs (body and chassis modules), and general-purpose DC-DC conversion stages.
When designing with this part, ensure the gate-source voltage stays within the recommended maximum and provide adequate PCB thermal relief, as 500 mW (Ta) is the absolute limit at 25°C. For high-current or high-ambient designs, derate power dissipation using the thermal resistance curve from the manufacturer datasheet.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet.
드롭인 대체품: BSS306NH6327XTSA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: BSS306NH6327XTSA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Technology, Continuous Drain Current (ID), Drain-Source Voltage (VDS), MSL Level.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
BSS214NH6327XTSA1
✅ 드롭인✓ 재고 있음
$0.09 / 개
데이터시트 보기 →BSS138NH6327XTSA2
✅ 드롭인✓ 재고 있음
$0.15 / 개
데이터시트 보기 →BSS806NH6327XTSA1
✅ 드롭인✓ 재고 있음
$0.19 / 개
데이터시트 보기 →2N7002H6327XTSA2
✅ 드롭인✓ 재고 있음
$0.08 / 개
데이터시트 보기 →IRLML6346TRPBF
✅ 드롭인✓ 재고 있음
$0.18 / 개
데이터시트 보기 →BSS306NH6327XTSA1 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| Part Number | BSS306NH6327XTSA1 |
| Part Family | BSS306N (OptiMOS Small Signal) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) | 2.3 A (Ta) |
| Power Dissipation (PD) | 500 mW (Ta) |
| 패키지 | SOT-23 (PG-SOT23), 3-pin |
| 실장 유형 | Surface Mount |
| 동작 온도 | -55°C to +150°C (TJ) |
| Qualification | AEC-Q101 (Automotive) |
| Lead Plating | Pb-free (RoHS compliant) |
| Configuration | Single N-Channel, 3-pin |
BSS306NH6327XTSA1 핀 구성
| 핀 1 | Gate (G) — MOSFET gate control input; logic-level drive capable |
| 핀 2 | Source (S) — MOSFET source terminal; connected to ground in low-side configuration |
| 핀 3 | Drain (D) — MOSFET drain terminal; connected to load in low-side configuration |
안전 동작 영역 (SOA) - BSS306N family
일반적인 애플리케이션
BSS306NH6327XTSA1 적합 용도: 6 애플리케이션s: Automotive Load Switching, Portable / Battery-Powered Load Management, Industrial Automation Switching, DC-DC Converter Power Stage, LED Driver Switch, Signal Routing & Level Shifting.
Automotive Load Switching
The BSS306NH6327XTSA1's 2.3 A continuous drain current and AEC-Q101 automotive qualification make it an ideal high-side/low-side load switch for body and chassis ECUs. With 30 V VDS it comfortably handles 12 V automotive bus transients up to ~18 V load-dump. Placed between the MCU GPIO and the relay/LED load, the BSS306NH6327XTSA1 dissipates only millwatts under typical loads, vastly outperforming bipolar Darlington pairs. Logic-level gate drive simplifies direct interfacing with 3.3 V or 5 V automotive MCUs.
추천
Portable / Battery-Powered Load Management
In portable and battery-powered designs, the BSS306NH6327XTSA1's low on-resistance minimizes conduction loss during load-switching, extending battery runtime. With 30 V VDS and 2.3 A ID, it can switch between Li-ion battery rails (3.0-4.2 V) and downstream boost/buck converters or peripheral subsystems. The SOT-23 footprint occupies minimal PCB area, critical for wearables and IoT devices. Estimated: at 1 A load with 50 mΩ RDS(on), conduction loss is only ~50 mW - well within the 500 mW Ta rating.
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Industrial Automation Switching
The BSS306NH6327XTSA1 serves industrial automation modules that require reliable, automotive-grade switching in 24 V PLC and sensor networks. Its 30 V VDS provides sufficient margin above 24 V nominal rails (including ±10% tolerance and switching transients). At 2.3 A continuous current, it can directly drive solenoids, small relays, and indicator LEDs without driver stages. The wide -55°C to +150°C TJ range ensures operation in harsh factory environments, and AEC-Q101 qualification signals robust manufacturing quality.
추천
DC-DC Converter Power Stage
The BSS306NH6327XTSA1 functions as a synchronous rectifier or low-side switch in compact DC-DC converter stages. Its low gate charge and fast switching capability minimize switching losses at frequencies up to several hundred kHz. With 30 V VDS, it handles intermediate bus voltages in 12 V to 5 V or 12 V to 3.3 V conversion stages. Placed as the low-side MOSFET in a synchronous buck topology, the BSS306NH6327XTSA1 achieves efficiency comparable to larger packages while saving board space.
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LED Driver Switch
The BSS306NH6327XTSA1 is well-suited as a constant-current LED driver switch for indicator and lighting applications. With 2.3 A ID capability, it can directly drive multiple high-brightness LEDs in series or parallel arrays. The 30 V VDS supports LED strings of up to ~8-10 white LEDs (forward voltage ~3 V each). The SOT-23 footprint enables integration into compact backlight drivers. AEC-Q101 qualification permits use in automotive interior/exterior lighting where qualification is required.
추천
Signal Routing & Level Shifting
The BSS306NH6327XTSA1 functions as a fast analog switch in signal routing applications, including test equipment multiplexing and level shifting. Its low on-resistance and small SOT-23 package make it suitable for high-density signal-path designs. At 30 V VDS and 2.3 A ID, it can pass analog signals up to ±15 V amplitude. The fast switching speed supports multiplexing of signals in the MHz range, while logic-level gate drive allows direct GPIO control from MCUs or FPGAs.
추천
추천 제품 요약
엔지니어링 참조 데이터: BSS306NH6327XTSA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | BSS214NH6327XTSA1 | BSS138NH6327XTSA2 | BSS806NH6327XTSA1 | 2N7002H6327XTSA2 | IRLML6346TRPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | SOT-23 (PG-SOT23), 3-pin | SOT-23 - same | SOT-23 - same | SOT-23 - same | SOT-23 - same | SOT-23 (Micro3) - same footprint |
| FET Type | N-Channel | N-Channel | N-Channel | P-Channel | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 30 V | 20 V | 60 V | 20 V (P-ch) | 60 V | 30 V |
| Continuous Drain Current (ID) | 2.3 A (Ta) | 1.5 A (Ta) | 0.2 A (Ta) | 2.0 A (Ta) | 0.2 A (Ta) | 3.4 A (Ta) |
| Power Dissipation (PD) | 500 mW (Ta) | 500 mW (Ta) | 360 mW (Ta) | 500 mW (Ta) | 360 mW (Ta) | 1.3 W (Ta) |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | No (industrial) |
| Logic-Level Gate Drive | Yes (OptiMOS standard) | Yes | Yes | Yes | Yes | Yes (1.5V drive) |
주요 차별점
- AEC-Q101 automotive qualification in a standard 3-pin SOT-23 (vs 2N7002H6327XTSA2)
- Higher continuous drain current than BSS138 in same package (vs BSS138NH6327XTSA2)
- N-channel polarity with OptiMOS technology for low RDS(on) (vs BSS806NH6327XTSA1 (P-channel))
설계 노트
At Ta=25°C the BSS306NH6327XTSA1 is rated for 500 mW continuous power dissipation. Estimated: with typical SOT-23 theta_JA ~250°C/W on a 1oz 2-layer board, junction temperature rises ~125°C above ambient at full 500 mW. For continuous loads above ~1 W of conduction loss (large VIN-VOUT differentials at high current), derate to 250-300 mW or add thermal copper pours under the drain tab to reduce theta_JA to ~150°C/W. Always consult the manufacturer datasheet SOA graph for your specific VDS and pulse duration.
The SOT-23 footprint requires minimum 0603-sized pads with thermal relief spokes. Route the high-current drain trace (pin 3) on the top layer with maximum copper width (at least 20 mil for 1 A continuous). Place a 100 nF ceramic bypass capacitor near the gate if the gate is driven by a long trace (>10 mm) to prevent parasitic oscillation. The exposed pad on SOT-23 is the drain, which doubles as a heatsink - keep the drain copper pour as large as practical.
Common pitfalls when using the BSS306NH6327XTSA1 include: (1) Exceeding VGS max by applying gate voltages above the rated maximum - the thin gate oxide can be permanently damaged; (2) Forgetting that SOT-23 has limited thermal mass - high-current pulses need SOA verification; (3) Mixing up the gate/source/drain pin assignment from competitor 2N7002-style parts that use opposite pin assignments. Always consult the manufacturer's pin configuration diagram before layout. The Infineon datasheet marks pin 1 as Gate, pin 2 as Source, pin 3 as Drain for the BSS306N family.
For switching applications above 100 kHz, minimize the gate-drive loop area by placing the gate pull-up/down resistor and series gate resistor within 5 mm of the gate pin. Keep the drain-to-source current loop compact to reduce parasitic inductance that causes voltage spikes at turn-off. If switching inductive loads (relays, solenoids), add a flyback diode across the load - the BSS306NH6327XTSA1's 30 V VDS provides adequate margin for typical 12 V and 24 V inductive kickback with proper clamping.
규정 준수 정보
RoHS compliant with Pb-free lead plating per manufacturer datasheet. AEC-Q101 qualified for automotive applications (AEC-Q100 family standard for discrete semiconductors). Halogen-free status not explicitly stated in available data - confirm with manufacturer datasheet if required.
