BSZ031NE2LS5ATMA1 vs IPD50N03S4L06ATMA1 비교
다음의 상세 나란히 비교: BSZ031NE2LS5ATMA1 제조: Infineon 및 IPD50N03S4L06ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSZ031NE2LS5ATMA1 | IPD50N03S4L06ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.26 | $0.49 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSZ031NE2LS5ATMA1 | — |
| Technology / Platform | OptiMOS 5 25V/30V N-channel trench MOSFET | — |
| Drain-Source Voltage (VDS) max | 25 V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Continuous Drain Current (ID) at Ta=25C | 19 A | — |
| Continuous Drain Current (ID) at Tc=25C | 40 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| RDS(on) max @ VGS=10 V | 3.1 mOhm | — |
| RDS(on) typical @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Power Dissipation at Ta=25C | 2.1 W | — |
| Power Dissipation at Tc=25C | 30 W | — |
| 동작 접합 온도 | -55 C to +150 C | -55 C to +175 C |
| 패키지 | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | [DATA_NEEDED: MSL] | MSL1 (up to 260 C peak reflow) |
| RoHS 상태 | Compliant | Compliant (Green Package) |
| Lead-Free | Yes | — |
| 할로겐 프리 | Yes | — |
| FET Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (V_DS) | — | 30 V |
| Continuous Drain Current (I_D, Tc) | — | 50 A |
| On-State Resistance (R_DS(on) max) | — | 5.5 mOhm at V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th) typ) | — | 2.2 V |
| Total Gate Charge (Q_g) | — | 31 nC at V_GS = 10 V |
| Input Capacitance (C_iss) | — | 2.33 nF |
| Output Capacitance (C_oss) | — | 600 pF |
| Reverse Transfer Capacitance (C_rss) | — | 34 pF |
| Power Dissipation (P_D) | — | 56 W at Tc = 25 C |
| Automotive Qualification | — | AEC-Q101 |
| Avalanche Rating | — | 100% Avalanche Tested |