BSZ031NE2LS5ATMA1 vs IPD50N03S4L06ATMA1 Comparison
Detailed side-by-side comparison of BSZ031NE2LS5ATMA1 by Infineon and IPD50N03S4L06ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ031NE2LS5ATMA1 - 25V N-Ch 3.1mOhm OptiMOS 5 MOSFET | Infineon
BSZ031NE2LS5ATMA1 β Active
Specification Comparison
| Parameter | BSZ031NE2LS5ATMA1 | IPD50N03S4L06ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.26 | $0.49 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSZ031NE2LS5ATMA1 | β |
| Technology / Platform | OptiMOS 5 25V/30V N-channel trench MOSFET | β |
| Drain-Source Voltage (VDS) max | 25 V | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | β |
| Continuous Drain Current (ID) at Ta=25C | 19 A | β |
| Continuous Drain Current (ID) at Tc=25C | 40 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| RDS(on) max @ VGS=10 V | 3.1 mOhm | β |
| RDS(on) typical @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Power Dissipation at Ta=25C | 2.1 W | β |
| Power Dissipation at Tc=25C | 30 W | β |
| Operating Junction Temperature | -55 C to +150 C | -55 C to +175 C |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL] | MSL1 (up to 260 C peak reflow) |
| RoHS Status | Compliant | Compliant (Green Package) |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| FET Type | β | N-Channel, Enhancement Mode |
| Drain-Source Voltage (V_DS) | β | 30 V |
| Continuous Drain Current (I_D, Tc) | β | 50 A |
| On-State Resistance (R_DS(on) max) | β | 5.5 mOhm at V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th) typ) | β | 2.2 V |
| Total Gate Charge (Q_g) | β | 31 nC at V_GS = 10 V |
| Input Capacitance (C_iss) | β | 2.33 nF |
| Output Capacitance (C_oss) | β | 600 pF |
| Reverse Transfer Capacitance (C_rss) | β | 34 pF |
| Power Dissipation (P_D) | β | 56 W at Tc = 25 C |
| Automotive Qualification | β | AEC-Q101 |
| Avalanche Rating | β | 100% Avalanche Tested |