BSZ0501NSIATMA1 vs BSZ031NE2LS5ATMA1 비교

다음의 상세 나란히 비교: BSZ0501NSIATMA1 제조: Infineon 및 BSZ031NE2LS5ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BSZ0501NSIATMA1 BSZ031NE2LS5ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.29 $0.26
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ0501NSIATMA1 BSZ031NE2LS5ATMA1
Product Family OptiMOS 5 (25V/30V) —
FET Type N-Channel —
Drain-Source Voltage (Vds) 30 V —
Continuous Drain Current (Id) at TA=25C 25 A —
Continuous Drain Current (Id) at TC=25C 40 A —
Power Dissipation (Pd) at TA=25C 2.1 W —
Power Dissipation (Pd) at TC=25C 50 W —
Operating Mode Enhancement Mode —
Configuration Single with built-in diode —
패키지 PG-TSDSON-8-FL (3.3 x 3.3 mm) PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm)
실장 유형 Surface Mount Surface Mount
Number of Terminals 8 —
JESD-609 Code e3 (matte tin) —
MSL 레벨 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL]
Rds(on) at Vgs=10V (typ) [DATA_NEEDED: Rds(on) value] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th)] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
동작 온도 범위 [DATA_NEEDED: Tj max] —
RoHS 상태 Compliant Compliant
Technology / Platform — OptiMOS 5 25V/30V N-channel trench MOSFET
Drain-Source Voltage (VDS) max — 25 V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Continuous Drain Current (ID) at Ta=25C — 19 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
RDS(on) max @ VGS=10 V — 3.1 mOhm
RDS(on) typical @ VGS=4.5 V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Power Dissipation at Ta=25C — 2.1 W
Power Dissipation at Tc=25C — 30 W
동작 접합 온도 — -55 C to +150 C
Lead-Free — Yes
할로겐 프리 — Yes

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