BSZ070N08LS5ATMA1 vs BSC052N08NS5ATMA1 비교
다음의 상세 나란히 비교: BSZ070N08LS5ATMA1 제조: Infineon 및 BSC052N08NS5ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSZ070N08LS5ATMA1 | BSC052N08NS5ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.78 | $0.52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS™ 5 (80 V logic-level) | — |
| Polarity / Channel Type | N-Channel enhancement mode | — |
| Drain-Source Voltage (VDS) max | 80 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at TC | 74 A (Tc, per datasheet) | — |
| Continuous Drain Current (ID) at TA / Si | [DATA_NEEDED: TA-rated ID] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10 V | 7 mΩ | — |
| On-Resistance RDS(on) @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at 4.5 V] | — |
| Gate Threshold Voltage VGS(th) | Logic-level (drive compatible with 4.5 V) | — |
| Total Gate Charge Qg | [DATA_NEEDED: total Qg] | — |
| Power Dissition PD max at TC | 69 W | — |
| 동작 접합 온도 | -55 °C to +150 °C | -55C to +150C |
| 패키지 | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) Surface Mount | PG-TDSON-8 (SuperSO8) 5x6 mm |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | 1 (per JEDEC J-STD-020, unleaded reflow) | 1 (unlimited) |
| RoHS 상태 | Compliant | Compliant |
| Avalanche Rated | Yes | — |
| Reel Quantity | 5000 per 13-inch reel (T&R) | — |
| Part Number | — | BSC052N08NS5ATMA1 |
| Technology | — | OptiMOS 5 |
| 트랜지스터 유형 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc) | — | 95 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.2 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage VGS(th) typ | — | 2.5-3.0 V |
| Total Power Dissipation (Tc) | — | 83 W |
| Total Power Dissipation (Ta) | — | 2.5 W |