BSZ070N08LS5ATMA1 - 80V 7mΩ OptiMOS 5 N-FET | Infineon
부품 번호: BSZ070N08LS5ATMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.28 | $128.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.92 | $920.00 |
| 5,000 | $0.78 | $3,900.00 |
BSZ070N08LS5ATMA1 개요
A power MOSFET is a voltage-controlled semiconductor switch used in synchronous rectification, DC-DC conversion, and load switching. Within the broader taxonomy, this part belongs to: N-channel MOSFET -> enhancement-mode power MOSFET -> OptiMOS 5 family -> Infineon 80 V logic-level platform -> power-management discrete. The OptiMOS 5 generation targets lower RDS(on) per mm² and lower gate charge than prior OptiMOS generations, which directly improves conduction loss and switching loss in high-frequency SMPS designs.
Key electrical features include a low 7 mΩ maximum on-resistance, a logic-level gate drive threshold for 4.5 V MCU compatibility, low Qg and Qgd figures that minimize driver losses, and an avalanche-rated body diode for robust handling of inductive transients. The PQFN 3.3 x 3.3 mm package provides low parasitic inductance and an exposed drain pad for direct PCB heatsinking. Compared with older OptiMOS 3 or STD-MOSFET equivalents, this part offers a noticeably lower figure-of-merit (FOM = RDS(on) × Qg), which is the principal engineering reason for its selection in modern high-density converters.
Typical applications include synchronous buck converters for 48 V telecom and datacom rails, USB-PD and wireless-charging adapters, motor-drive half-bridges in battery-powered tools, and hot-swap / OR-ing switches on 12 V to 48 V distribution buses. The part's logic-level gate makes it particularly attractive as a low-side synchronous rectifier directly driven by a 5 V PWM controller.
When designing with this device, gate-drive strength and dead-time optimization are critical: pair the BSZ070N08LS5ATMA1 with a gate driver capable of 1-2 A peak source/sink current, and minimize high-side/low-side dead-time to limit body-diode conduction losses. The exposed pad must be soldered to a sufficiently large copper pour to keep the junction temperature within the rated 150 °C maximum.
드롭인 대체품: BSZ070N08LS5ATMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: BSZ070N08LS5ATMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Technology, Package, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
BSC070N08LS5
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BSC052N08NS5ATMA1
✅ 드롭인✓ 재고 있음
$0.52 / 개
데이터시트 보기 →BSZ0901NSATMA1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BSZ096N10LS5ATMA1
✅ 드롭인✓ 재고 있음
$0.94 / 개
데이터시트 보기 →ISC0802NLSATMA1
✅ 드롭인✓ 재고 있음
$1.8 / 개
데이터시트 보기 →BSZ070N08LS5ATMA1 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS™ 5 (80 V logic-level) |
| Polarity / Channel Type | N-Channel enhancement mode |
| Drain-Source Voltage (VDS) max | 80 V |
| Gate-Source Voltage (VGS) max | ±20 V |
| Continuous Drain Current (ID) at TC | 74 A (Tc, per datasheet) |
| On-Resistance RDS(on) max @ VGS=10 V | 7 mΩ |
| Gate Threshold Voltage VGS(th) | Logic-level (drive compatible with 4.5 V) |
| Power Dissition PD max at TC | 69 W |
| 동작 접합 온도 | -55 °C to +150 °C |
| 패키지 | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) Surface Mount |
| 실장 유형 | Surface Mount |
| MSL 레벨 | 1 (per JEDEC J-STD-020, unleaded reflow) |
| RoHS 상태 | Compliant |
| Avalanche Rated | Yes |
| Reel Quantity | 5000 per 13-inch reel (T&R) |
BSZ070N08LS5ATMA1 핀 구성
| 핀 1 | G — Gate (logic-level, 4.5 V drive compatible) |
| 핀 2 | S — Source |
| 핀 3 | S — Source |
| 핀 4 | S — Source |
| 핀 5 | D — Drain (substrate internally connected) |
| 핀 6 | S — Source |
| 핀 7 | S — Source |
| 핀 8 | S — Source |
| 핀 PAD | D — Drain thermal pad (bottom-exposed, must be soldered to PCB copper for thermal dissipation) |
안전 동작 영역 (DC, Tj = 25 °C)
일반적인 애플리케이션
BSZ070N08LS5ATMA1 적합 용도: 7 애플리케이션s: 48 V Telecom / Datacom Synchronous Buck, USB-PD and Wireless-Charging Adapters, Battery-Powered Tools Motor Drive, Hot-Swap and OR-ing Switches on 24-48 V Bus, Automotive 12 V / 24 V Load Switching, Solar Microinverter Primary-Side Switch, Industrial Robotics BLDC Drive.
48 V Telecom / Datacom Synchronous Buck
The BSZ070N08LS5ATMA1 fits 48 V telecom and datacom synchronous buck converters as a low-side synchronous rectifier. Its 80 V VDS provides ample margin above the nominal 48 V rail, while the 7 mΩ RDS(on) keeps conduction loss low at the 20-40 A load currents typical of intermediate bus converters. The logic-level gate threshold allows direct drive from a 5 V PWM controller output, eliminating the need for a separate gate-driver bootstrap for the low-side FET and simplifying the bill of materials.
추천
USB-PD and Wireless-Charging Adapters
In USB-PD adapters and wireless-charging transmitter stages, the BSZ070N08LS5ATMA1 serves as the primary-side high-voltage switch in flyback or active-clamp topologies. The 7 mΩ RDS(on) minimizes primary conduction loss at the 100-200 kHz switching frequencies typical of GaN-replacement silicon designs, while the 80 V rating comfortably covers the 400 V PFC bulk rail derated for resonant topologies. Its PQFN 3.3 x 3.3 mm footprint is small enough to fit in 18-30 W wall-adapter form factors.
추천
Battery-Powered Tools Motor Drive
The BSZ070N08LS5ATMA1 suits 18-36 V cordless-tool motor half-bridges, where it functions as either the high-side or low-side FET in a 3-phase inverter. Its logic-level gate enables direct drive from a 3.3 V or 5 V gate-driver IC, simplifying the inverter electronics. The 7 mΩ on-resistance limits I²R losses during high-torque motor stall currents (50-100 A peaks), while the 80 V VDS handles the back-EMF transients of BLDC motors at high RPM.
추천
Hot-Swap and OR-ing Switches on 24-48 V Bus
The BSZ070N08LS5ATMA1 works as a hot-swap controller's pass MOSFET on 24 V or 48 V distribution rails. Its logic-level gate threshold lets a hot-swap controller IC drive it directly, while the 80 V VDS withstands transient overvoltages during load-dump events on 24 V industrial buses. The 7 mΩ RDS(on) keeps continuous conduction loss manageable at the 10-30 A typical of server and telecom board power rails.
추천
Automotive 12 V / 24 V Load Switching
In automotive 12 V and 24 V body-control modules, the BSZ070N08LS5ATMA1 can serve as a high-current load switch for headlamp modules, seat heaters, or fan controllers. The 80 V VDS provides robust protection against ISO 7637-2 load-dump transients on truck 24 V systems, while the 7 mΩ RDS(on) handles continuous currents of 20-40 A with low dissipation. Designers typically validate automotive-grade OptiMOS 5 variants for full AEC-Q101 qualification rather than using the standard part.
추천
Solar Microinverter Primary-Side Switch
In sub-600 W solar microinverters, the BSZ070N08LS5ATMA1 can be used as the primary-side switch in a two-stage topology where the front-end DC-DC converter handles 30-40 V panel voltages. The 7 mΩ RDS(on) keeps losses modest at 100 kHz switching frequencies, and the 80 V VDS comfortably covers panel open-circuit voltages in cold conditions. The PQFN 3.3 x 3.3 mm footprint allows dense PCB layouts that fit in the small NEMA enclosures used in microinverter installations.
추천
Industrial Robotics BLDC Drive
The BSZ070N08LS5ATMA1 is well-suited as a low-side FET in the 3-phase inverter for industrial robotics servo drives operating from 24-48 V DC bus. The 7 mΩ RDS(on) keeps inverter conduction loss below 1% at the 20-30 A continuous phase currents typical of small-payload robot joints, while the 80 V VDS withstands regen transients during motor deceleration. Its logic-level gate allows simple bootstrap gate-driver ICs to switch the FET at the 20-50 kHz PWM frequencies typical of field-oriented-control loops.
추천
추천 제품 요약
엔지니어링 참조 데이터: BSZ070N08LS5ATMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | BSC070N08LS5 | BSC052N08NS5ATMA1 | BSZ0901NSATMA1 | BSZ096N10LS5ATMA1 | ISC0802NLSATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) - same | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) - same | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) - same | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) - same | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) - same |
| VDS max | 80 V | 80 V | 80 V | 80 V | 100 V | 80 V |
| RDS(on) max @ 10 V VGS | 7 mΩ | 7 mΩ | 5.2 mΩ | 9 mΩ | 9.6 mΩ | 8 mΩ |
| Logic-Level Gate (4.5 V drive) | Yes | Yes | No (standard 10 V gate) | No (standard 10 V gate) | Yes | Yes |
| Generation / Technology | OptiMOS 5 LS (logic-level) | OptiMOS 5 LS | OptiMOS 5 standard | OptiMOS 5 standard | OptiMOS 5 LS (100 V) | OptiMOS 5 LS |
주요 차별점
- Logic-level gate drive compatible with 4.5 V microcontrollers (vs BSC052N08NS5ATMA1)
- Lowest 7 mΩ RDS(on) in Infineon's PQFN 3.3 x 3.3 80 V logic-level family (vs BSZ0901NSATMA1)
- 80 V rating with logic-level gate, the only one in the 80 V OptiMOS 5 LS line at this footprint (vs BSZ096N10LS5ATMA1)
설계 노트
Estimated: with the bottom-exposed drain pad of the PG-TSDSON-8-FL package, design at least 1 cm² of 2-oz copper on the top layer plus thermal via array (8-12 vias of 0.3 mm drill) to the inner copper plane. At continuous 30 A with VIN = 48 V and low-side RDS(on) of 7 mΩ, dissipation is about 6 W; this copper geometry keeps the junction-to-ambient thermal resistance near 50 °C/W, limiting temperature rise to ~50 °C above ambient. Avoid cutting the drain copper plane with signal traces or vias.
Estimated power dissipation in a typical 48 V-to-12 V synchronous buck converter at 20 A output with 90% efficiency: low-side FET losses are dominated by body-diode conduction during dead-time (typical 30 ns) plus I²R loss. With 7 mΩ RDS(on) and 30% duty cycle, conduction loss is about 0.5 W. Add 1-2 W for switching and gate-drive losses. The 69 W TC-rated dissipation is generous; the PCB copper area, not the package rating, is the real-world limit.
Do not exceed VGS = ±20 V. The logic-level gate threshold can be fully enhanced at 4.5 V, but driving at 10 V lowers RDS(on) by ~15% and is preferred for high-current paths. Always add a 10 kΩ gate-source pull-down resistor to prevent accidental turn-on from dv/dt coupling during high-side switching. Boot the high-side gate supply with a 100 nF ceramic bypass capacitor placed within 2 mm of the BSZ070N08LS5ATMA1 source pins.
규정 준수 정보
RoHS compliant per Infineon product page. Standard part is not AEC-Q101 qualified; automotive applications require an AEC-Q101 qualified OptiMOS 5 variant.
