BSZ096N10LS5ATMA1 vs BSZ110N08NS5ATMA1 비교
다음의 상세 나란히 비교: BSZ096N10LS5ATMA1 제조: Infineon 및 BSZ110N08NS5ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
BSZ096N10LS5ATMA1 - 100V 9.6mΩ OptiMOS 5 N-Channel MOSFET | Infineon
BSZ096N10LS5ATMA1 ✓ 활성
사양 비교
| 파라미터 | BSZ096N10LS5ATMA1 | BSZ110N08NS5ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.94 | $0.44 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Polarity | N-Channel | N-Channel |
| Drain-Source Voltage (VDS max) | 100 V | — |
| Gate-Source Voltage (VGS max) | 20 V (typical) | — |
| Continuous Drain Current (ID, TC=25 °C) | 40 A | — |
| Maximum Silicon Drain Current (ID max) | 62 A | — |
| Pulse Drain Current (ID,pulse) | 160 A | — |
| On-Resistance RDS(on) max | 9.6 mΩ at VGS=10 V | 11 mΩ |
| Total Power Dissipation (Ptot, TC=25 °C) | 69 W | — |
| Gate Threshold Voltage VGS(th) | Logic-level (low single-volt range) | — |
| Diode Continuous Forward Current (IS) | 40 A (TC=25 °C) | — |
| Diode Forward Voltage (VSD) | 0.85 V typ, 1.2 V max at IF=20 A | — |
| 패키지 | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | -55 °C to +150 °C (junction) | [DATA_NEEDED: operating temperature range] |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS 5 N-Channel Power MOSFET |
| Gate Drive | Logic-level compatible | — |
| ESD Protection | Yes (gate-integrated) | — |
| RoHS 상태 | Compliant | Compliant |
| Packaging Code | ATMA1 (tape and reel) | — |
| Part Family | — | OptiMOS 5 |
| Drain-to-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at Tc | — | 40 A |
| Power Dissipation (PD) at Tc | — | 50 W |
| Configuration | — | Single MOSFET |
| Gate Drive Voltage (VGS) | — | [DATA_NEEDED: VGS rating] |
| MSL 레벨 | — | [DATA_NEEDED: MSL level] |