BTS6133DAUMA1 vs BTS4130QGAXUMA1 비교

다음의 상세 나란히 비교: BTS6133DAUMA1 제조: Infineon 및 BTS4130QGAXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BTS6133DAUMA1 BTS4130QGAXUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.98 $1.86
Manufacturer Infineon Technologies —
Part Number BTS6133DAUMA1 —
Product Type Smart High-Side Power Switch Quad Smart High-Side Power Switch
Technology SIPMOS (N-channel MOSFET with control IC) —
Switch Configuration 1:1 (single high-side) —
출력 수 1 —
Peak Drain Current 41 A —
Continuous Load Current 8 A —
Operating Voltage Range [DATA_NEEDED: VBB operating range] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at 25C] —
패키지 PG-TO252-5-11 (DPAK-5) PG-DSO-20-32 (20-pin DSO, 7.50 mm width)
핀 수 5 —
실장 유형 Surface Mount Surface Mount
동작 온도 범위 -40C to +150C -40 C to +150 C junction
Protection Features Over-temperature, short-circuit, overload, under-voltage, over-voltage, current limitation Current limit, overtemperature shutdown, overvoltage clamp, reverse battery
Diagnostic Feedback Yes (status / fault pin) —
MSL 레벨 3 (per JEDEC J-STD-020, typical for DPAK) 3 (per JEDEC J-STD-020)
RoHS 상태 Compliant Compliant
AEC-Q100 Qualified AEC-Q100 qualified (automotive grade) —
Datasheet Document Size 257 Kbytes (15 pages) —
Number of Channels — 4
토폴로지 — High-Side N-Channel MOSFET with charge pump
Continuous Load Current per Channel — 2.1 A
On-State Resistance R_DS(on) per Channel — 130 mOhm typical
동작 공급 전압 — 6 V to 18 V (extended to 28 V transient)
Overvoltage Clamp (Load Dump) — 45 V typical
Quiescent Current (Standby) — [DATA_NEEDED: quiescent current value]
Automotive Qualification — AEC-Q100 qualified
Diagnostic Output — Status feedback pin

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