BTS621L1E3128ABUMA1 vs ITS716GFUMA1 비교

다음의 상세 나란히 비교: BTS621L1E3128ABUMA1 제조: Infineon 및 ITS716GFUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BTS621L1E3128ABUMA1 ITS716GFUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $2.45 $3.22
Product Type Dual-channel smart high-side power switch (PROFET) Smart High-Side Power Switch
Number of Channels 2 (dual high-side, 1:1) 4
FET Topology N-Channel vertical power MOSFET with charge pump —
On-State Resistance Rds(on) 8 mΩ typical per channel —
Nominal Operating Voltage 12 V (automotive bus) —
Maximum Supply Voltage 24 V (load-dump survivable) —
Continuous Load Current 4.4 A per channel —
동작 온도 범위 -40 °C to +150 °C junction -40 C to +85 C (industrial grade)
패키지 PG-TO263-7-2 (D2PAK-7, exposed tab) PG-DSO-20-32 (20-pin SOIC, exposed pad)
실장 유형 Surface Mount Surface Mount
Input Logic Compatibility CMOS-compatible, ground-referenced —
Diagnostic Feedback Yes - open-load and overtemperature reporting —
Embedded Protection Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery —
Technology Smart SIPMOS (monolithic) —
RoHS / Lead-Free Compliant (Pb-free) —
출력 구성 — High-side (N-Channel MOSFET)
Continuous Current per Channel — 2.3 A
On-State Resistance (RON) per Channel — [DATA_NEEDED: Ron typical value]
Operating Voltage Range (Vbb) — 5 V to 36 V
Load Dump Tolerance — Up to 45 V
Standby Current — [DATA_NEEDED: Iq standby typical]
Input Logic Levels — CMOS/TTL compatible, parallel interface
Diagnostic Output — Open-drain fault flag, one per channel
Protection Features — Overload, short-circuit, over-temperature, over-voltage, ESD
PWM Capability — Up to 1 kHz
열 저항, 접합-주변 — [DATA_NEEDED: theta_JA value]
MSL 레벨 — [DATA_NEEDED: MSL rating]
RoHS 상태 — Compliant

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