EP3SE110F780C4L vs EP3SE110F780C3N 비교
다음의 상세 나란히 비교: EP3SE110F780C4L 제조: Intel 및 EP3SE110F780C3N 제조: Intel. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | EP3SE110F780C4L | EP3SE110F780C3N |
|---|---|---|
| 브랜드 | Intel | Intel |
| 카테고리 | FPGA & CPLD | FPGA & CPLD |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1,550.00 | $1,245.00 |
| Series | Stratix III E | — |
| Number of Logic Elements (LE) | 107,500 | — |
| Number of Logic Array Blocks (LAB) | [DATA_NEEDED: number of LABs] | — |
| Total Memory Bits | 8,936,448 bits | — |
| Number of 18x18 Multipliers | 488 | — |
| Number of PLLs | [DATA_NEEDED: PLL count] | — |
| User I/O Pins | 488 | — |
| Speed Grade | -4 (commercial) | — |
| Process Variant | L (low-leakage) | — |
| 동작 온도 | 0C to +85C (commercial) | — |
| Supply Voltage (Core) | [DATA_NEEDED: core voltage] | — |
| Package Type | 780-Ball FCBGA | — |
| Ball Pitch | 1.0 mm | — |
| 실장 유형 | Surface Mount | Surface Mount (BGA) |
| Process Technology | 65 nm CMOS | 65 nm |
| RoHS 상태 | Compliant | Compliant |
| MSL 레벨 | 3 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Family | — | Stratix III E |
| Logic Elements (LEs) | — | 107,500 |
| Embedded Memory Bits | — | 8,936,448 |
| Logic Array Blocks (LABs) | — | 4,300 |
| User I/Os | — | 488 |
| 패키지 | — | 780-ball FCBGA (Flip-Chip BGA) |
| Core Voltage | — | 1.1 V |
| Maximum Operating Frequency | — | 500 MHz |
| DSP Blocks | — | Yes (integrated, count varies by configuration) |
| Transceiver Channels | — | 8 (multi-gigabit) |
| Embedded Memory | — | TriMatrix (MLAB + M9K + M144K) |
| Configuration Method | — | Serial / Parallel via Quartus II |
| Operating Temperature Grade | — | Commercial (C suffix) |