EP3SE260F1152C3N vs EP3SE260F1152C2N 비교
다음의 상세 나란히 비교: EP3SE260F1152C3N 제조: Intel 및 EP3SE260F1152C2N 제조: Intel. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Intel
EP3SE260F1152C3N - Stratix III E FPGA, 255K LE, 744 I/O, 1152-FBGA | Intel
EP3SE260F1152C3N ✓ 활성사양 비교
| 파라미터 | EP3SE260F1152C3N | EP3SE260F1152C2N |
|---|---|---|
| 브랜드 | Intel | Intel |
| 카테고리 | FPGA & CPLD | FPGA & CPLD |
| 수명 주기 상태 | 활성 | Obsolete |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $7,500.00 | $11,000.00 |
| Series | Stratix III E | Stratix III E |
| Logic Elements / Cells | 255,000 | — |
| Embedded Memory Bits | 16,672,768 bits | — |
| Logic Array Blocks (LABs) | 10,200 | — |
| User I/O Count | 744 | — |
| 패키지 | 1152-BBGA, FCBGA | — |
| 실장 유형 | Surface Mount | Surface Mount |
| Process Technology | 65 nm | 65 nm |
| Core Voltage | 1.1 V | — |
| 동작 온도 | 0 C to +85 C (Commercial) | [DATA_NEEDED: operating temperature grade] |
| Transceivers | Integrated high-speed transceivers | — |
| DSP Blocks | Yes (dedicated multiplier/accumulator) | — |
| Embedded Memory Type | TriMatrix (true dual-port, FIFO, ROM, RAM) | — |
| External Memory Support | DDR3, DDR2, QDR II+, RLDRAM II | — |
| Configuration Modes | AS, AP, PS, FPP, JTAG | — |
| Partial Reconfiguration | Supported | — |
| Programmable Power Technology | Yes (up to 50% dynamic power reduction) | — |
| RoHS 상태 | Compliant | Compliant |
| Family | — | FPGA - Field Programmable Gate Array |
| Number of Logic Elements | — | 255000 |
| Number of LABs/CLBs | — | 10200 |
| Total Memory Bits | — | 16672768 |
| Number of I/O | — | 744 |
| Voltage - Supply | — | 1.1 V |
| 패키지 / 케이스 | — | 1152-BBGA, FCBGA |
| Maximum Frequency | — | 600 MHz |
| Supplier Device Package | — | 1152-FCBGA |
| MSL 레벨 | — | [DATA_NEEDED: MSL rating] |
| Lead Free | — | Yes (per EP3SE260F1152C2G comparison) |
| ECCN | — | [DATA_NEEDED: ECCN code] |
| Moisture Sensitivity | — | [DATA_NEEDED: MSL level] |