EP4CGX50CF27C8N vs EP4CGX110DF31C8N 비교
다음의 상세 나란히 비교: EP4CGX50CF27C8N 제조: Intel 및 EP4CGX110DF31C8N 제조: Intel. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | EP4CGX50CF27C8N | EP4CGX110DF31C8N |
|---|---|---|
| 브랜드 | Intel | Intel |
| 카테고리 | FPGA & CPLD | FPGA & CPLD |
| 수명 주기 상태 | NRND | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $125.00 | $325.00 |
| Series | Cyclone IV GX | — |
| Family | Cyclone IV GX | Cyclone IV GX |
| Device | EP4CGX50 | — |
| 패키지 | FBGA-672 (F27) | 896-ball FineLine BGA (F31), 31 mm |
| Logic Elements (LE) | 49,440 | — |
| Logic Array Blocks (LABs) | 3,118 | 6,839 |
| User I/O Pins | 310 (maximum) | — |
| Embedded Memory | 2,502 Kbit | — |
| Embedded Multiplier (18x18) | [DATA_NEEDED: 18x18 multiplier count] | — |
| PLLs | 8 | 4 general-purpose PLLs |
| Transceivers | Up to 8 channels, up to 3.125 Gbps | 8 high-speed transceivers up to 3.125 Gbps |
| Transceiver Protocols | PCIe Gen1, GigE, Serial RapidIO, Basic mode | — |
| Process Technology | 60 nm low-power CMOS | 60 nm low-power CMOS |
| Core Voltage (VCCINT) | 1.2 V (typical) | — |
| Configuration Modes | Passive Serial, Active Serial, JTAG, Fast Passive Parallel | — |
| 동작 온도 | Commercial (0C to +85C) | — |
| Speed Grade | 8 | 8 |
| 실장 유형 | Surface Mount (BGA) | — |
| RoHS 상태 | Lead-free per verified web data | Compliant |
| Logic Elements | — | 109,424 |
| Embedded Memory Bits | — | 5,621,760 (approximately 702 Kbits) |
| Embedded Memory Blocks | — | M9K blocks, 9-bit parity |
| DSP Blocks (18x18 Multipliers) | — | 264 multipliers |
| Maximum User I/Os | — | 475 |
| I/O Banks | — | 8 |
| PCI Express Hard IP | — | PCIe Gen1/Gen2 x1/x2/x4 |
| Core Supply Voltage | — | 1.2 V |
| Operating Temperature (Commercial) | — | 0C to 85C |
| Configuration | — | SRAM-based, supports AS, PS, JTAG, FPP |