IAUC100N04S6L020ATMA1 vs IAUCN04S7N006ATMA1 비교
다음의 상세 나란히 비교: IAUC100N04S6L020ATMA1 제조: Infineon 및 IAUCN04S7N006ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L020ATMA1 ✓ 활성사양 비교
| 파라미터 | IAUC100N04S6L020ATMA1 | IAUCN04S7N006ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.86 | $0.95 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Breakdown Voltage V(BR)DSS | 40 V | — |
| Continuous Drain Current (Tc) | 100 A | — |
| Power Dissipation (Tc) | 75 W | — |
| RDS(on) Maximum @ VGS=10V, ID=50A | 2.04 mΩ | — |
| RDS(on) Typical | 2.0 mΩ | — |
| Gate-Source Voltage VGS (max) | ±20 V | — |
| Gate Threshold Voltage VGS(th) Typical | 2.0 V | — |
| Technology | OptiMOS 6 | OptiMOS 5 (trench) |
| 동작 온도 범위 | -55 °C to +175 °C (TJ) | -55 C to +175 C |
| 패키지 | PG-TDSON-8 (SS08, 5x6 mm leadless) | PG-TDSON-8-43 |
| 실장 유형 | Surface Mount | Surface Mount |
| Qualification | Automotive grade | — |
| Packaging | Tape & Reel (TMA1) | — |
| RoHS 상태 | Compliant | — |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) | — | 175 A |
| On-State Resistance (RDS(on)) | — | 0.63 mOhm (typ at VGS = 10 V) |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Junction Temperature Max | — | 175 C |
| Power Dissipation Max (Pd) | — | [DATA_NEEDED: Pd max] |
| Gate Charge Total (Qg) | — | [DATA_NEEDED: Qg total] |
| Automotive Qualification | — | AEC-Q101 |
| Lead-Free / RoHS | — | Yes (compliant) |
| MSL 레벨 | — | [DATA_NEEDED: MSL rating] |