IAUC100N04S6N022ATMA1 vs IAUCN04S7L050HATMA1 비교
다음의 상세 나란히 비교: IAUC100N04S6N022ATMA1 제조: Infineon 및 IAUCN04S7L050HATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IAUC100N04S6N022ATMA1 | IAUCN04S7L050HATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.82 | $0.83 |
| Technology | OptiMOS 6, N-Channel MOSFET | Trench MOSFET, OptiMOS™ 7 40V |
| Drain-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D, Tc) | 100 A | — |
| Power Dissipation (P_D, Tc) | 75 W | — |
| R_DS(on) (typ at V_GS=10V) | 2.2 mOhm | — |
| 패키지 | PG-TDSON-8 (5x6 mm) leadless | PG-TDSON-8-57 (SuperSO8 half-bridge) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | -55C to +175C (junction) | — |
| Polarity | N-Channel enhancement mode | — |
| Automotive Qualification | AEC-Q100 (IAUC family) | AEC-Q101 (family-level, automotive grade) |
| 핀 수 | 8 | — |
| Gate Threshold V_GS(th) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Q_g | [DATA_NEEDED: total gate charge] | — |
| MSL 레벨 | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS™ 7 |
| Configuration | — | Dual N-Channel (Dual Drain, Half-Bridge) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID), Tc=25°C | — | 65 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.04 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) @ Tc=25°C | — | 40 W |
| 동작 접합 온도 | — | -55 °C to +175 °C |