IAUC120N06S5L032ATMA1 vs IAUC120N06S5N032ATMA1 비교

다음의 상세 나란히 비교: IAUC120N06S5L032ATMA1 제조: Infineon 및 IAUC120N06S5N032ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IAUC120N06S5L032ATMA1 IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L032ATMA1 ✓ 활성
Infineon
IAUC120N06S5N032ATMA1 IAUC120N06S5N032ATMA1 - 60V 120A OptiMOS-5 N-MOSFET | Infineon

IAUC120N06S5N032ATMA1 - 60V 120A OptiMOS-5 N-MOSFET | Infineon

IAUC120N06S5N032ATMA1 ✓ 활성

사양 비교

파라미터 IAUC120N06S5L032ATMA1 IAUC120N06S5N032ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.82 $0.61
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 (60 V) —
트랜지스터 유형 N-Channel, Enhancement Mode —
Drain-to-Source Voltage (V_DS) 60 V —
Continuous Drain Current (I_D, T_j) 120 A —
R_DS(on) Max (V_GS = 10 V) 3.2 mOhm —
Power Dissipation (P_D, T_C = 25 C) 94 W —
패키지 PG-TDSON-8-34 (5x6 mm) PG-TDSON-8-34 (SSO8 5x6 mm)
실장 유형 Surface Mount Surface Mount (Tape and Reel)
동작 온도 범위 -55 C to +175 C (T_j) -55C to +175C (Tj)
Technology OptiMOS 5 Trench OptiMOS-5 N-Channel
AEC-Q101 Qualified Yes —
RoHS 상태 Compliant Compliant
MSL 레벨 [DATA_NEEDED: MSL rating] MSL 1 (per JEDEC J-STD-020)
Gate Threshold Voltage V_GS(th) [DATA_NEEDED: V_GS(th) typical and min/max] —
Total Gate Charge Q_G [DATA_NEEDED: Q_G total at V_GS=10V] —
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TC=25C — 120 A
Power Dissipation (PD) at TC=25C — 94 W
On-Resistance RDS(on) max at VGS=10V — 3.2 mOhm
Gate Charge (Qg) typ — 47 nC
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
핀 수 — 8
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Recovery Charge (Qrr) — [DATA_NEEDED: Qrr]
Gate Resistance (Rg) — [DATA_NEEDED: Rg]
Automotive Qualification — AEC-Q101 qualified
Lead-Free — Yes

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