IAUC120N06S5N032ATMA1 - 60V 120A OptiMOS-5 N-MOSFET | Infineon
부품 번호: IAUC120N06S5N032ATMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.25 | $1.25 |
| 10 | $1.12 | $11.20 |
| 100 | $0.98 | $98.00 |
| 500 | $0.85 | $425.00 |
| 1,000 | $0.72 | $720.00 |
| 5,000 | $0.61 | $3,050.00 |
IAUC120N06S5N032ATMA1 개요
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device in which the gate field modulates a conducting channel between drain and source. N-channel power MOSFETs like this one are the dominant building block of synchronous buck converters, motor half-bridges, and hot-swap controllers because of their low on-resistance per unit silicon area. Within the broader taxonomy, MOSFETs are a sub-category of discrete transistors, themselves within discrete semiconductors and ultimately the power management ecosystem that converts and conditions electrical energy.
The OptiMOS-5 process technology delivers industry-leading figure-of-merit (FOM = RDS(on) x Qg), reducing switching losses by approximately 30% versus the previous OptiMOS-3 generation. The low 3.2 mOhm RDS(on) minimizes conduction loss in high-current paths, while the 47 nC Qg enables fast switching at high frequency. The 60 V drain-source voltage rating suits 12 V automotive systems including load dump transients (where battery voltage can briefly reach 35-40 V), USB Power Delivery, and 24 V mild-hybrid bus rails.
Typical applications include automotive 12 V load switches, electric power steering (EPS), brake-by-wire, DC-DC converter high-side switches, and ADAS sensor power rails. The PG-TDSON-8-34 package provides a low thermal resistance path (sub-1 C/W junction-to-case with proper PCB footprint), enabling continuous 120 A operation at moderate ambient temperatures with appropriate copper area.
When designing with this device, allocate sufficient PCB copper area for the exposed thermal pad to achieve rated continuous current. Use a gate driver capable of sourcing/sinking at least 1-2 A peak to switch the 47 nC gate charge within the target transition time. Add a TVS diode across drain-source if the application involves inductive loads, since unclamped avalanche can exceed the part's SOA and lead to failure.
This page synthesizes distributor pricing, AEC-Q101 drop-in alternatives, thermal calculations, and PCB layout guidance not consolidated in any single manufacturer document, providing engineers with the practical context needed for first-pass design success.
드롭인 대체품: IAUC120N06S5N032ATMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IAUC120N06S5N032ATMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Operating Temperature Range, Technology, Mounting Type, Drain-Source Voltage (VDS).
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IAUC120N06S5L032ATMA1
✅ 드롭인✓ 재고 있음
$0.82 / 개
데이터시트 보기 →ISC015N06NM5ATMA1
✅ 드롭인✓ 재고 있음
$0.62 / 개
데이터시트 보기 →IAUC120N06S5L015ATMA1
✅ 드롭인✓ 재고 있음
$0.92 / 개
데이터시트 보기 →BSC019N04LSTATMA1
✅ 드롭인✓ 재고 있음
$1.21 / 개
데이터시트 보기 →IPC50N04S5L5R5ATMA1
✅ 드롭인✓ 재고 있음
$0.36 / 개
데이터시트 보기 →IAUC120N06S5N032ATMA1 최대 정격 & 전기적 특성
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at TC=25C | 120 A |
| Power Dissipation (PD) at TC=25C | 94 W |
| On-Resistance RDS(on) max at VGS=10V | 3.2 mOhm |
| Gate Charge (Qg) typ | 47 nC |
| Technology | OptiMOS-5 N-Channel |
| 동작 온도 범위 | -55C to +175C (Tj) |
| 패키지 | PG-TDSON-8-34 (SSO8 5x6 mm) |
| 실장 유형 | Surface Mount (Tape and Reel) |
| 핀 수 | 8 |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS 상태 | Compliant |
| MSL 레벨 | MSL 1 (per JEDEC J-STD-020) |
| Lead-Free | Yes |
IAUC120N06S5N032ATMA1 핀 구성
| 핀 1 | GATE — Gate control input (drive to 10V for full enhancement) |
| 핀 2 | DRAIN — Drain terminal (high-current load connection) |
| 핀 3 | DRAIN — Drain terminal (paralleled with pin 2) |
| 핀 4 | DRAIN — Drain terminal (paralleled with pin 2) |
| 핀 5 | DRAIN — Drain terminal (paralleled with pin 2) |
| 핀 6 | DRAIN — Drain terminal (paralleled with pin 2) |
| 핀 7 | DRAIN — Drain terminal (paralleled with pin 2) |
| 핀 8 | SOURCE — Source terminal / Thermal pad (connect to GND) |
안전 동작 영역 (DC, TC=25C)
일반적인 애플리케이션
IAUC120N06S5N032ATMA1 적합 용도: 6 애플리케이션s: Automotive 12V Load Switch, Electric Power Steering (EPS) Motor Drive, USB Power Delivery (PD) High-Side Switch, 48V Mild-Hybrid Bus DC-DC Converter, ADAS Sensor Power Rail, Brake-by-Wire Actuator Driver.
Automotive 12V Load Switch
The IAUC120N06S5N032ATMA1 is engineered for high-current 12V automotive load switching, including ECU power distribution, seat heaters, and window lift motors. Its 120A continuous drain current and 3.2 mOhm RDS(on) at VGS=10V minimize conduction losses in continuous-load paths, while the 60V VDS rating absorbs 35-40V load-dump transients on the 12V automotive bus without avalanche breakdown. Designers typically place the MOSFET as a low-side switch driven by a dedicated gate driver IC (such as IR2110SPBF), with the exposed pad soldered to a 2-square-inch copper pour for sub-1 C/W RthJC. The AEC-Q101 qualification streamlines PPAP documentation for Tier 1 automotive suppliers.
추천
Electric Power Steering (EPS) Motor Drive
In Electric Power Steering systems, the IAUC120N06S5N032ATMA1 functions as the high-side or low-side switch in a three-phase H-bridge driving the EPS motor. The 47 nC total gate charge enables 25-50 kHz PWM switching with low driver loss, while the 120A peak current capability covers the 80-100A peak torque-assist demands of column-assist EPS systems. Infineon's OptiMOS-5 process delivers industry-leading FOM (RDS(on) x Qg), reducing inverter switching losses by approximately 30% versus prior generations - critical for the strict 4-7W thermal budget in steering column housings. The -55C to +175C operating junction temperature range meets under-hood and engine-bay ambient extremes.
추천
USB Power Delivery (PD) High-Side Switch
The IAUC120N06S5N032ATMA1 serves as the high-side protection switch in USB Power Delivery sinks and hubs, where it must carry 5A continuous at 20V (100W) per USB PD 3.1 specification. The 60V VDS rating provides adequate margin for 20V bus operation plus transient overvoltage events. The 3.2 mOhm on-resistance dissipates only 0.08W at 5A load (versus 0.16W for a 6.4 mOhm alternative), preserving efficiency budget for downstream regulators. Designers typically add a TVS diode across drain-source for hot-plug surge protection and use a current-sense amplifier for USB-C over-current detection per the PD specification.
추천
48V Mild-Hybrid Bus DC-DC Converter
Although the 60V VDS rating limits its use in continuous 48V bus operation, the IAUC120N06S5N032ATMA1 is well suited as the synchronous rectifier in the low-voltage (12V) secondary side of 48V-to-12V DC-DC converters in mild-hybrid vehicles. The 3.2 mOhm RDS(on) keeps rectifier conduction loss below 1% of output power at 30A load, and the 47 nC Qg enables 200-500 kHz switching frequency for compact magnetics. The AEC-Q101 qualification and PG-TDSON-8-34 thermal performance simplify the design of liquid-cooled or convection-cooled DC-DC housings under the vehicle floorpan.
추천
ADAS Sensor Power Rail
The IAUC120N06S5N032ATMA1 powers the redundant supply rail for ADAS sensors including forward-facing radar, surround-view cameras, and lidar transceivers. Automotive functional-safety (ISO 26262) systems require dual-redundant power paths, and the Infineon part's AEC-Q101 qualification and proven automotive pedigree support ASIL-B and ASIL-D architectures. The 120A rating allows a single MOSFET to power an entire sensor cluster with margin, while the 3.2 mOhm RDS(on) preserves the tight voltage regulation required by radar MMIC and lidar laser-driver ICs. Designers typically add reverse-battery and load-dump TVS protection upstream of the MOSFET.
추천
Brake-by-Wire Actuator Driver
Brake-by-wire electrohydraulic actuators require fault-tolerant MOSFET switching with proven automotive reliability, making the AEC-Q101-qualified IAUC120N06S5N032ATMA1 a strong fit. The 120A continuous drain current covers the 60-90A peak currents of integrated brake boosters, while the 60V VDS rating withstands the inductive flyback of the brake motor winding (clamped by external TVS or snubber). The -55C to +175C junction temperature range meets the under-hood thermal stress of integrated brake modules. Designers pair this MOSFET with a current-sense amplifier and ASIL-D gate driver to support the redundancy requirements of ISO 26262 functional safety.
추천
추천 제품 요약
엔지니어링 참조 데이터: IAUC120N06S5N032ATMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IAUC120N06S5L032ATMA1 | ISC015N06NM5ATMA1 | IAUC120N06S5L015ATMA1 | BSC019N04LSTATMA1 | IPC50N04S5L5R5ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-34 (SSO8 5x6 mm) | PG-TDSON-8-34 (SSO8 5x6) - same | PG-TDSON-8-34 (SSO8 5x6) - same | PG-TDSON-8-34 (SSO8 5x6) - same | PG-TDSON-8-34 (SSO8 5x6) - same | PG-TDSON-8-34 (SSO8 5x6) - same |
| VDS max | 60 V | 60 V | 60 V | 60 V | 40 V | 40 V |
| RDS(on) max at VGS=10V | 3.2 mOhm | 3.2 mOhm | 1.5 mOhm | 1.5 mOhm | 1.9 mOhm | 5.5 mOhm |
| VGS(th) Variant | Normal-level | Logic-level | Normal-level | Logic-level | Normal-level | Logic-level |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
| Approximate 1k+ Price (USD) | $0.72 | $0.75 (typ) | $1.10 (typ) | $0.95 (typ) | $0.65 (typ) | $0.45 (typ) |
주요 차별점
- Logic-level gate variant available in same footprint (vs IAUC120N06S5L032ATMA1)
- Industry-leading OptiMOS-5 FOM (vs ISC015N06NM5ATMA1)
- AEC-Q101 qualified with full automotive traceability (vs Non-automotive alternatives from other vendors)
설계 노트
Estimated: At continuous 120 A load with RDS(on) of 3.2 mOhm, conduction loss is I^2 x RDS(on) = 120^2 x 0.0032 = 46 W. With TC held at 100C by an active cooling system or 100A continuous in air with the PG-TDSON-8-34 exposed pad soldered to 2 square inches of 2 oz copper (RthJA approx 35 C/W), the junction rises another 100C - approaching the 175C Tj limit. For continuous 120A operation, the PCB must dissipate the full 94 W PD; derate to 60-80 A in still air without active cooling.
Per Infineon layout guidelines for PG-TDSON-8-34, the exposed thermal pad must be soldered to a PCB land area matching the JEDEC MO-240 footprint, with thermal vias (12-16 vias of 0.3mm diameter) connecting to inner-layer copper planes. Use 2 oz copper on outer layers to minimize spreading resistance. The gate-drive trace should be kept short (<25 mm) and routed away from the drain switching node to avoid parasitic Miller injection. Place a 10 kOhm gate-source resistor close to the gate pin to prevent false turn-on from drain dv/dt.
Do not exceed VGS of +/-20V (absolute max); use a gate-source Zener clamp (typically 15V) for protection against transient overvoltage on long gate-drive traces. Never operate the part without a proper gate resistor (typically 10-100 Ohm) - undamped gate drive causes ringing and possible Miller-induced turn-on in half-bridge configurations. For inductive loads, add a TVS diode or RC snubber across drain-source to clamp avalanche energy below the part's EAS rating. Verify VDS margin against worst-case load-dump transients (up to 40V on 12V automotive bus).
규정 준수 정보
AEC-Q101 qualified (automotive MOSFET standard, equivalent grade for discrete semiconductors). RoHS and REACH compliant per Infineon product page. Lead-free reflow soldering per JEDEC J-STD-020 MSL1. Halogen-free per IEC 61249-2-21.
