IAUC120N06S5N032ATMA1 vs BSC019N04LSTATMA1 비교
다음의 상세 나란히 비교: IAUC120N06S5N032ATMA1 제조: Infineon 및 BSC019N04LSTATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IAUC120N06S5N032ATMA1 | BSC019N04LSTATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.61 | $1.21 |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | 120 A | — |
| Power Dissipation (PD) at TC=25C | 94 W | — |
| On-Resistance RDS(on) max at VGS=10V | 3.2 mOhm | — |
| Gate Charge (Qg) typ | 47 nC | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Technology | OptiMOS-5 N-Channel | OptiMOS 5 (N-channel trench MOSFET) |
| 동작 온도 범위 | -55C to +175C (Tj) | -55 C to +150 C |
| 패키지 | PG-TDSON-8-34 (SSO8 5x6 mm) | TDSON-8 (SuperSO8) 5x6 mm |
| 실장 유형 | Surface Mount (Tape and Reel) | Surface Mount |
| 핀 수 | 8 | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| Gate Resistance (Rg) | [DATA_NEEDED: Rg] | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS 상태 | Compliant | Compliant |
| MSL 레벨 | MSL 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| Lead-Free | Yes | — |
| Continuous Drain Current (ID, Tc=25C) | — | 161 A |
| Continuous Drain Current (ID, Ta=25C) | — | 28 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed ID limit] |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.9 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage VGS(th) typ | — | 1.7 V |
| Total Gate Charge Qg typ | — | 85 nC |
| Power Dissipation PD (Tc=25C) | — | 94 W |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Avalanche Rated | — | Yes |