IAUC60N04S6L030HATMA1 vs IAUC100N10S5L040ATMA1 비교
다음의 상세 나란히 비교: IAUC60N04S6L030HATMA1 제조: Infineon 및 IAUC100N10S5L040ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IAUC100N10S5L040ATMA1 - 100V 4mΩ 100A N-Channel MOSFET | Infineon
IAUC100N10S5L040ATMA1 ✓ 활성사양 비교
| 파라미터 | IAUC60N04S6L030HATMA1 | IAUC100N10S5L040ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.94 | $1.94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | OptiMOS 6 | — |
| Configuration | Half-Bridge (2 N-Channel) | — |
| Drain-Source Voltage (VDS) | 40 V | 100 V |
| Continuous Drain Current (ID) at TJ | 60 A | — |
| On-Resistance R_DS(on) at VGS=10V | 3.0 mOhm (typical) | — |
| Total Gate Charge (Qg) at VGS=10V | 35 nC | — |
| Output Capacitance (Coss) | 2.128 nF | — |
| Reverse Transfer Capacitance (Crss) | 596 pF | — |
| Gate Threshold Voltage (VGS(th)) | 2 V | — |
| Maximum Power Dissipation (PD) at TC | 75 W | — |
| 동작 접합 온도 | -55 C to +175 C | — |
| 패키지 | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) | PG-TDSON-8-34 (SuperSO8 5x6 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (per part number suffix) | AEC-Q101 qualified |
| RoHS 상태 | Compliant | — |
| MSL 레벨 | 1 (per JEDEC J-STD-020) | — |
| Part Family | — | OptiMOST 5 Power-Transistor (IAUC) |
| 트랜지스터 유형 | — | N-Channel Enhancement Mode MOSFET |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Pulsed Drain Current (IDM) | — | 400 A |
| On-State Resistance RDS(on) max | — | 4 mOhm |
| Gate Threshold Voltage VGS(th) | — | Logic Level |
| Continuous Power Dissipation (Tc) | — | 167 W |
| 동작 온도 범위 | — | -55 C to +175 C (junction) |
| MSL Moisture Sensitivity | — | MSL1 (up to 260 C peak reflow) |
| Avalanche Tested | — | 100% production avalanche tested |
| AOI Compatibility | — | Feasible for automatic optical inspection |