IAUTN04S7N004ATMA1 vs IAUCN04S7N037GATMA1 비교
다음의 상세 나란히 비교: IAUTN04S7N004ATMA1 제조: Infineon 및 IAUCN04S7N037GATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IAUTN04S7N004ATMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $6.05 | $0.89 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | — |
| Technology | N-Channel Trench MOSFET | Trench MOSFET, N-Channel |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | [DATA_NEEDED: ID at TC=25C] | — |
| Continuous Drain Current (ID) at Tj | 350 A | 91 A |
| On-Resistance RDS(on) max | 0.38 mΩ | — |
| Power Dissipation (PD) at TC | 255 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typical/range] |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| 동작 온도 범위 | -55C to +175C | [DATA_NEEDED: junction/ambient temperature limits] |
| 패키지 | PG-HSOF-8-8 (TOLL 10x12) | SSO4G 5x6 mm² (PG-THSOG-4-1) |
| 실장 유형 | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| Qualification | AEC-Q101 Automotive | — |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Polarity | N-Channel | — |
| Series | — | OptiMOS 7 |
| On-State Resistance RDS(on) typical | — | 3.65 mΩ at VGS = 10 V |
| Power Dissipation (PD) at Tc | — | 57 W |
| Channel Type | — | N-Channel |
| Operating Mode | — | Enhancement |
| Automotive Qualification | — | AEC-Q101 |
| MSL 레벨 | — | [DATA_NEEDED: MSL level] |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: total gate charge] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |