IDH04G65C6XKSA1 vs IDD04SG60CXTMA2 비교
다음의 상세 나란히 비교: IDH04G65C6XKSA1 제조: Infineon 및 IDD04SG60CXTMA2 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IDH04G65C6XKSA1 | IDD04SG60CXTMA2 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | Diodes | Diodes |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.92 | $0.74 |
| Diode Type | Silicon Carbide (SiC) Schottky | — |
| Series | CoolSiC G6 | — |
| Repetitive Peak Reverse Voltage (VRRM) | 650 V | 600 V |
| Average Forward Current (IF(AV)) | 4 A | — |
| Non-Repetitive Peak Surge Current (IFSM) | 12 A (per distributor listing) | — |
| Forward Voltage (VF) at IF | 1.25 V (typical at rated IF) | — |
| Reverse Recovery Charge (Qrr) | 0 nC (SiC Schottky - no reverse recovery) | — |
| Total Capacitive Charge (Qc) | [DATA_NEEDED: Qc value] | 4.5 nC |
| Junction Capacitance (Cj) | 205 pF @ 1 V, 1 MHz (per onepcba listing) | — |
| 동작 접합 온도 범위 | -55C to +175C | -55 C to +175 C |
| Storage Temperature Range | [DATA_NEEDED: Tstg min/max] | -55 C to +150 C |
| Package / Supplier Device Package | PG-TO220-2 (through-hole) | — |
| 실장 유형 | Through Hole | Surface Mount |
| RoHS 상태 | Compliant | Compliant |
| Configuration | Single Diode | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolSiC G3 thinQ Schottky Diode |
| Device Type | — | Silicon Carbide (SiC) Schottky Diode, Single |
| Continuous Forward Current (IF), TC=135 C | — | 4 A |
| Non-Repetitive Forward Surge Current (IFSM), tp=10ms | — | [DATA_NEEDED: IFSM surge rating] |
| Forward Voltage (VF) typ. at IF=4A, Tj=25 C | — | 1.5 V |
| Total Capacitance (Ctot) at VR=400V | — | [DATA_NEEDED: Ctot at 400 V] |
| Reverse Current (IR) at VR=600V, Tj=25 C | — | [DATA_NEEDED: IR max at 600 V] |
| 패키지 | — | PG-TO252-3 (DPAK), 3-pin surface mount with tab |
| Lead-Free Finish | — | Yes (Sn plating) |
| MSL (Moisture Sensitivity Level) | — | MSL 3 (per JEDEC J-STD-020) |
| 할로겐 프리 | — | Yes |