IGD06N60TATMA1 vs IDD06SG60CXTMA2 비교

다음의 상세 나란히 비교: IGD06N60TATMA1 제조: Infineon 및 IDD06SG60CXTMA2 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IGD06N60TATMA1 IGD06N60TATMA1 - 600V 6A TRENCHSTOP IGBT3 | Infineon

IGD06N60TATMA1 - 600V 6A TRENCHSTOP IGBT3 | Infineon

IGD06N60TATMA1 ✓ 활성

사양 비교

파라미터 IGD06N60TATMA1 IDD06SG60CXTMA2
브랜드 Infineon Infineon
카테고리 Transistors Diodes
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.62 $1.54
Manufacturer Infineon Technologies Infineon Technologies
Series TRENCHSTOP IGBT3 —
IGBT Type Trench Field Stop —
Collector-Emitter Voltage (VCE) 600 V —
Continuous Collector Current (IC) at TC=25°C 12 A —
Continuous Collector Current (IC) at TC=100°C 6 A —
Maximum Pulsed Collector Current (ICM) 18 A (per datasheet) —
Maximum Power Dissipation (Ptot) 88 W —
Gate-Emitter Voltage (VGE) ±20 V —
VCE(sat) at IC=6A, VGE=15V, Tj=25°C 1.5 V (typical) —
Gate Threshold Voltage (VGE(th)) 3.0 V min / 5.0 V max (typical 4.0 V) —
Turn-on Switching Energy (Eon) [DATA_NEEDED: Eon] —
Turn-off Switching Energy (Eoff) [DATA_NEEDED: Eoff] —
Integrated Diode Yes, soft-recovery emitter-controlled diode —
동작 접합 온도 -40 °C to +175 °C -55 °C to +175 °C
Storage Temperature -55 °C to +150 °C —
패키지 PG-TO252-3-11 (DPAK / TO-252) —
실장 유형 Surface Mount —
RoHS 상태 Compliant Compliant
Lead-Free Yes —
Product Family — CoolSiC™ Schottky Diode G3 (thinQ™)
Diode Configuration — Single
Technology — Silicon Carbide (SiC) Schottky
Reverse Voltage (VRRM) — 600 V
Continuous Forward Current (IF) — 6 A
Repetitive Peak Forward Current (IFRM) — [DATA_NEEDED: IFRM]
Non-Repetitive Peak Forward Surge Current (IFSM) — 32 A
Forward Voltage (VF) at IF=6A — 2.1 V (typical)
Reverse Current (IR) Max — 500 nA
Total Capacitive Charge (Qc) — [DATA_NEEDED: Qc value]
패키지 / 케이스 — PG-TO252-3 (DPAK)
장착 스타일 — Surface Mount (SMD/SMT)
Packaging — Cut Tape (Tape & Reel per factory standard)

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