IGD06N60TATMA1 vs IDD06SG60CXTMA2 对比
详细并排对比 IGD06N60TATMA1 出自 Infineon 和 IDD06SG60CXTMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IGD06N60TATMA1 | IDD06SG60CXTMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Transistors | Diodes |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.62 | $1.54 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | TRENCHSTOP IGBT3 | — |
| IGBT Type | Trench Field Stop | — |
| Collector-Emitter Voltage (VCE) | 600 V | — |
| Continuous Collector Current (IC) at TC=25°C | 12 A | — |
| Continuous Collector Current (IC) at TC=100°C | 6 A | — |
| Maximum Pulsed Collector Current (ICM) | 18 A (per datasheet) | — |
| Maximum Power Dissipation (Ptot) | 88 W | — |
| Gate-Emitter Voltage (VGE) | ±20 V | — |
| VCE(sat) at IC=6A, VGE=15V, Tj=25°C | 1.5 V (typical) | — |
| Gate Threshold Voltage (VGE(th)) | 3.0 V min / 5.0 V max (typical 4.0 V) | — |
| Turn-on Switching Energy (Eon) | [DATA_NEEDED: Eon] | — |
| Turn-off Switching Energy (Eoff) | [DATA_NEEDED: Eoff] | — |
| Integrated Diode | Yes, soft-recovery emitter-controlled diode | — |
| 工作结温 | -40 °C to +175 °C | -55 °C to +175 °C |
| Storage Temperature | -55 °C to +150 °C | — |
| 封装 | PG-TO252-3-11 (DPAK / TO-252) | — |
| 安装类型 | Surface Mount | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Product Family | — | CoolSiC™ Schottky Diode G3 (thinQ™) |
| Diode Configuration | — | Single |
| Technology | — | Silicon Carbide (SiC) Schottky |
| Reverse Voltage (VRRM) | — | 600 V |
| Continuous Forward Current (IF) | — | 6 A |
| Repetitive Peak Forward Current (IFRM) | — | [DATA_NEEDED: IFRM] |
| Non-Repetitive Peak Forward Surge Current (IFSM) | — | 32 A |
| Forward Voltage (VF) at IF=6A | — | 2.1 V (typical) |
| Reverse Current (IR) Max | — | 500 nA |
| Total Capacitive Charge (Qc) | — | [DATA_NEEDED: Qc value] |
| 封装 / 外壳 | — | PG-TO252-3 (DPAK) |
| 安装方式 | — | Surface Mount (SMD/SMT) |
| Packaging | — | Cut Tape (Tape & Reel per factory standard) |