IMLT65R040M2HXTMA1 vs AIMBG120R010M1XTMA1 비교
다음의 상세 나란히 비교: IMLT65R040M2HXTMA1 제조: Infineon 및 AIMBG120R010M1XTMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IMLT65R040M2HXTMA1 | AIMBG120R010M1XTMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $4.25 | $41.90 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolSiC™ G2 (2nd generation SiC trench) | CoolSiC™ G1 Automotive SiC Trench MOSFET |
| Technology | Silicon Carbide (SiC) N-channel MOSFET | Silicon Carbide (SiC) Trench MOSFET |
| Drain-Source Voltage (VDS) | 650 V | 1200 V |
| Continuous Drain Current (ID, TC) | 57 A | — |
| Pulsed Drain Current (ID,pulse) | 143 A | — |
| On-State Resistance RDS(on) (typ, VGS=18V) | 40 mΩ | — |
| On-State Resistance RDS(on) (max, VGS=18V) | 49 mΩ | — |
| Total Gate Charge QG | 28 nC | — |
| Output Charge QOSS @ 400 V | 53 nC | — |
| Output Energy EOSS @ 400 V | 7.2 µJ | — |
| Continuous Drain Power Dissipation (PD, TC) | 268 W | — |
| Recommended Gate Drive Voltage VGS | 18 V (turn-off: 0 V or negative) | — |
| 동작 접합 온도 | -55 °C to +150 °C | -55°C to +175°C |
| 패키지 | PG-HDSOP-16-6 (surface mount, top-side-cooled) | PG-TO263-7 (TO-263-7 / D2PAK-7) surface mount |
| 실장 유형 | Surface Mount | Surface Mount |
| Qualification | JEDEC industrial | — |
| Packaging | Tape & Reel | — |
| Special Features | Kelvin source pin, low reverse-recovery charge, hard-switching optimized | — |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 205 A |
| On-Resistance RDS(on), typ | — | 8.7 mΩ |
| Power Dissipation (PD, Tc) | — | 882 W |
| Automotive Qualification | — | AEC-Q101 |
| 핀 수 | — | 7 + Tab |
| RoHS 상태 | — | Compliant |
| Lead-Free | — | Yes |
| MSL 레벨 | — | [DATA_NEEDED: MSL level per JEDEC J-STD-020] |