IPB100N04S4H2ATMA1 vs IPC70N04S5L4R2ATMA1 비교

다음의 상세 나란히 비교: IPB100N04S4H2ATMA1 제조: Infineon 및 IPC70N04S5L4R2ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IPC70N04S5L4R2ATMA1 IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon

IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon

IPC70N04S5L4R2ATMA1 ✓ 활성

사양 비교

파라미터 IPB100N04S4H2ATMA1 IPC70N04S5L4R2ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.42 $0.78
FET Type N-Channel, Enhancement Mode N-Channel
Technology OptiMOS-T2 (trench gate) MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) [DATA_NEEDED: max VGS rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
RDS(on) at VGS=10V 2.4 mΩ typical —
Maximum Power Dissition (PD) at TC=25C 115 W —
동작 접합 온도 -55C to +175C —
Storage Temperature [DATA_NEEDED: storage temp range] —
패키지 PG-TO263-3-2 (D2PAK-2) Surface Mount PG-TDSON-8-34 (Surface Mount)
실장 유형 Surface Mount Surface Mount
MSL 레벨 MSL1 (up to 260C peak reflow) MSL1 (up to 260°C peak reflow)
Avalanche Energy (EAS) 100% avalanche tested —
Automotive Qualification AEC-Q101 qualified AEC-Q101
RoHS Compliance Compliant (Green Product) —
Drain to Source Voltage (Vdss) — 40 V
Continuous Drain Current (Id) @ Tc=25°C — 70 A
Power Dissipation (Pd) @ Tc=25°C — 50 W
R_DS(on) Max @ Vgs=10V — 4.2 mΩ (typ)
Gate Threshold (Vgs(th)) — Logic Level (4.5 V max Rds On, Min Rds On)
Drive Voltage (Max Rds On, Min Rds On) — 4.5 V
Operating Temperature (Tj) — -55°C to +175°C
Avalanche Tested — 100% (60 A production test)
RoHS 상태 — Compliant (Green Product)
Configuration — Single with Built-in Diode
Case Connection — DRAIN

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