IPD031N06L3GATMA1 vs IRLR8726TRLPBF 비교

다음의 상세 나란히 비교: IPD031N06L3GATMA1 제조: Infineon 및 IRLR8726TRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IPD031N06L3GATMA1 IRLR8726TRLPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.48 $0.36
FET Type N-Channel —
Technology MOSFET (Metal Oxide) —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TC=25°C 100 A —
Pulsed Drain Current (IDM) 400 A [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD) at TC=25°C 167 W —
RDS(on) Max at VGS=10V 3.1 mΩ —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.2 V —
Gate Drive Voltage (Max RDS(on)) 4.5 V, 10 V —
Total Gate Charge (Qg) Typ [DATA_NEEDED: Qg typical value] —
동작 온도 범위 -55°C to +175°C —
패키지 PG-TO252-3 (DPAK) TO-252AA (DPAK)
실장 유형 Surface Mount Surface Mount
Series OptiMOS 3 —
MSL 레벨 1 (Unlimited) 1 (per JEDEC J-STD-020, inferred from PBF suffix and DPAK packaging)
RoHS 상태 Compliant —
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at TC=25C — 86 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
On-Resistance RDS(on) Max at VGS=10V — 5.8 mOhm
On-Resistance RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate-Source Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) — 15 nC
Gate-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Maximum Power Dissipation (PD) at TC=25C — 75 W
동작 접합 온도 — -55C to +175C
Technology Family — StrongIRFET
RoHS Compliance — ROHS3 Compliant
Lead-Free — Yes (PBF suffix)

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