IPD70R1K4P7SAUMA1 vs IPD60R280P7SAUMA1 비교
다음의 상세 나란히 비교: IPD70R1K4P7SAUMA1 제조: Infineon 및 IPD60R280P7SAUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPD70R1K4P7SAUMA1 | IPD60R280P7SAUMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.52 | $0.48 |
| Manufacturer | Infineon Technologies | — |
| Part Family | CoolMOS P7 (700V Superjunction) | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 700 V | 600 V |
| Continuous Drain Current (ID) at Tc=25C | 4 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V, ID | 1.4 ohm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | 4 V max @ ID = 190 µA |
| Total Power Dissipation (Ptot) at Tc=25C | 23 W | — |
| 동작 접합 온도 | -55C to +150C | — |
| 패키지 | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| 실장 유형 | Surface Mount | Surface Mount |
| 핀 수 | 3 (Gate, Drain, Source) | — |
| Technology | Superjunction (CoolMOS P7) | CoolMOS P7 Superjunction (SJ) N-channel |
| Avalanche Energy Rated | Yes (100% avalanche tested) | — |
| ESD Protection | Integrated (per datasheet) | — |
| RoHS 상태 | Compliant | Compliant |
| Continuous Drain Current (ID, Tc) | — | 12 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 280 mΩ (typical) |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Total Power Dissipation (Ptot, Tc) | — | 53 W |
| Operating Junction Temperature (TJ) | — | -40 °C to +150 °C |
| MSL 레벨 | — | 1 |
| Series | — | CoolMOS P7 (7th generation, 600 V) |
| Integrated ESD Protection | — | Yes |