IPT015N10N5ATMA1 vs BSC040N10NS5ATMA1 비교
다음의 상세 나란히 비교: IPT015N10N5ATMA1 제조: Infineon 및 BSC040N10NS5ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPT015N10N5ATMA1 | BSC040N10NS5ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $2.78 | $0.93 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPT015N10N5ATMA1 | — |
| Technology | OptiMOS™ 5 | OptiMOS 5 |
| 트랜지스터 유형 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) Max | 100 V | — |
| Continuous Drain Current (ID, Tc) | 300 A | — |
| On-Resistance RDS(on) Max | 1.5 mΩ | — |
| Power Dissipation (PD, Tc) | 375 W | — |
| 패키지 | PG-HSOF-8-1 (TOLL) | PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8 |
| 실장 유형 | Surface Mount | Surface Mount |
| Configuration | Single | — |
| 동작 온도 | -55°C to +175°C | — |
| Gate Threshold VGS(th) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at VGS=10V] | [DATA_NEEDED: Qg total] |
| Output Capacitance (Coss) | Reduced up to 44% vs prior generation (per manufacturer claim) | — |
| RDS(on) Improvement vs Prior Generation | Up to 43% reduction | — |
| RoHS 상태 | Compliant | Compliant |
| Packaging | Tape & Reel | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Maximum On-Resistance (RDS(on)) | — | 4 mOhm |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) max | — | 136 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 139 W |
| 동작 온도 범위 | — | -55C to +150C |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Output Capacitance Reduction | — | Up to 44% vs previous generation |
| RDS(on) Reduction | — | Up to 43% vs previous generation |
| Automotive Qualification | — | AEC-Q101 (per Infineon OptiMOS 5 family) |