IPT015N10N5ATMA1 - 100V 300A 1.5mΩ OptiMOS 5 Power MOSFET | Infineon
부품 번호: IPT015N10N5ATMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $4.85 | $4.85 |
| 10 | $4.36 | $43.60 |
| 100 | $3.88 | $388.00 |
| 500 | $3.49 | $1,745.00 |
| 1,000 | $3.1 | $3,100.00 |
| 3,000 | $2.78 | $8,340.00 |
IPT015N10N5ATMA1 개요
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to commutate current between the drain and source terminals. N-channel MOSFETs conduct when a positive gate-source voltage is applied, and are the dominant topology for low-voltage, high-current conversion because their majority-carrier channel yields the lowest conduction loss per unit silicon area. Modern power MOSFETs such as OptiMOS™ 5 belong to the broader power management semiconductor hierarchy: discrete MOSFET -> power discrete -> power semiconductor -> semiconductor device. Their key metrics - on-resistance RDS(on), gate charge Qg, output capacitance COSS, and Figure-of-Merit (RDS(on) x Qg) - directly determine the efficiency and thermal envelope of any switched-mode power supply, motor drive, or battery protection circuit.
The IPT015N10N5ATMA1's headline figure-of-merit, combined with its 100V rating, makes it particularly effective in 48V automotive systems, telecom hold-up converters, and high-current synchronous buck or half-bridge stages. The TOLL (PG-HSOF-8-1) package offers an exposed top-side cooling pad compatible with double-sided cooling, allowing thermal resistance to be lowered substantially versus standard SO-8 footprints. The 300A pulsed current capability supports very high transient loads such as inrush, hot-swap, and e-fuse events.
When designing with this part, pay close attention to gate-drive voltage (OptiMOS 5 is fully specified at VGS = 10V), keep the gate-drive loop physically small to suppress ringing, and observe the safe operating area shown in Diagram 2 of the manufacturer datasheet for case temperatures other than the rated Tc. The combination of low RDS(on), low Qg, and the thermally-enhanced HSOF-8 package makes this part an industry-favored synchronous FET for high-density server, telecom, and automotive 48V applications.
드롭인 대체품: IPT015N10N5ATMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IPT015N10N5ATMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, RoHS Status, Technology, Configuration, Automotive Qualification.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IPT015N10N5
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BSC040N10NS5ATMA1
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$0.93 / 개
데이터시트 보기 →IPG20N10S436AATMA1
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$0.68 / 개
데이터시트 보기 →BSC0504NSIATMA1
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
가격 문의
데이터시트 보기 →BSC021N08NS5ATMA1
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$0.81 / 개
데이터시트 보기 →IPT015N10N5ATMA1 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| Part Number | IPT015N10N5ATMA1 |
| Technology | OptiMOS™ 5 |
| 트랜지스터 유형 | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | 100 V |
| Continuous Drain Current (ID, Tc) | 300 A |
| On-Resistance RDS(on) Max | 1.5 mΩ |
| Power Dissipation (PD, Tc) | 375 W |
| 패키지 | PG-HSOF-8-1 (TOLL) |
| 실장 유형 | Surface Mount |
| Configuration | Single |
| 동작 온도 | -55°C to +175°C |
| Output Capacitance (Coss) | Reduced up to 44% vs prior generation (per manufacturer claim) |
| RDS(on) Improvement vs Prior Generation | Up to 43% reduction |
| RoHS 상태 | Compliant |
| Packaging | Tape & Reel |
IPT015N10N5ATMA1 핀 구성
| 핀 1 | Source — Source terminal (low-side connection) |
| 핀 2 | Source — Source terminal (low-side connection) |
| 핀 3 | Source — Source terminal (low-side connection) |
| 핀 4 | Gate — Gate terminal (gate-drive input) |
| 핀 5 | Source — Source terminal (low-side connection) |
| 핀 6 | Source — Source terminal (low-side connection) |
| 핀 7 | Source — Source terminal (low-side connection) |
| 핀 8 | Drain — Drain terminal (high-side connection) |
안전 동작 영역 (DC, Tc = 25°C)
일반적인 애플리케이션
IPT015N10N5ATMA1 적합 용도: 6 애플리케이션s: 48V Automotive Synchronous Rectification, Telecom Hold-up and Battery Backup, Server and Data Center Power Supplies, High-current Hot-swap and E-Fuse Controllers, Industrial Motor Drive Half-Bridge, Solar Inverter and Energy Storage.
48V Automotive Synchronous Rectification
The IPT015N10N5ATMA1 is a primary candidate for the synchronous FETs in 48V mild-hybrid DC-DC converters, where its 100V VDS rating safely covers the 48V nominal bus plus inductive transient overshoots. Its 1.5 mΩ maximum RDS(on) at VGS = 10V keeps conduction loss under 2W per device at 40A load, and the PG-HSOF-8-1 (TOLL) top-side thermal pad enables double-sided cooling on the converter PCB. Compared with the prior OptiMOS generation, the 43% RDS(on) and 44% Coss reductions translate into approximately 1-2 percentage points of efficiency gain in a typical 48V/12V buck stage. The 300A pulsed current capability also tolerates inrush and hot-swap events in 48V e-fuse circuits.
추천
Telecom Hold-up and Battery Backup
In 48V telecom hold-up converters and battery backup units, the IPT015N10N5ATMA1 serves as the main switching element and as the synchronous rectifier on the high-current path. The 100V VDS rating accommodates the 48V rail plus transient ringing during hot-swap insertion, while the 300A continuous current rating supports the high inrush demanded by large bulk hold-up capacitors. The OptiMOS 5 trench technology's low gate charge reduces driver losses at high switching frequencies (100 kHz+), allowing smaller magnetics and higher power density. The TOLL package's exposed top-side pad permits direct attachment to a cold plate, a common cooling strategy in outdoor telecom rectifiers.
추천
Server and Data Center Power Supplies
High-current server CRPS and 48V-to-POL intermediate bus converters benefit from the IPT015N10N5ATMA1's combination of low RDS(on), small TOLL footprint, and top-side thermal pad. In a multi-kilowatt server PSU the synchronous rectification stage can be paralleled with two or three of these devices; each one's 1.5 mΩ RDS(on) keeps per-device conduction loss below 15W at 100A, and the package thermal pad connects directly to a heatsink or cold plate. Compared with older D²PAK solutions, the TOLL footprint delivers higher power density and the top-side cooling enables thinner PCB assemblies, which is critical for 1U and OCP server form factors.
추천
High-current Hot-swap and E-Fuse Controllers
Hot-swap and e-fuse circuits in 48V distribution demand a FET that can handle brief but very large inrush currents while dissipating minimal heat in steady state. The IPT015N10N5ATMA1's 300A continuous rating gives enormous headroom for capacitor-charging inrush, while its 1.5 mΩ RDS(on) keeps the steady-state dissipation to a few watts at typical 30-50A operating loads. The OptiMOS 5 trench technology's low output capacitance reduces the energy dissipated during turn-off, improving hot-swap robustness. The TOLL package's top-side cooling pad also simplifies thermal design in densely populated rack power shelves.
추천
Industrial Motor Drive Half-Bridge
Industrial motor drives operating from 24V or 48V DC bus rails commonly use the IPT015N10N5ATMA1 as the low-side and high-side FETs in a half-bridge leg. The 100V VDS rating supports 48V rails with comfortable transient margin, while the low RDS(on) keeps conduction loss low in continuous PWM operation at 20-50 kHz. The TOLL package's top-side thermal pad allows direct attachment to the motor-drive chassis, which often doubles as a heatsink. The combination of 300A continuous current and 375W power dissipation enables motor drives in the 5-15 kW range when appropriately paralleled and cooled.
추천
Solar Inverter and Energy Storage
Solar micro-inverters and residential energy storage systems with 48V battery buses use the IPT015N10N5ATMA1 in the high-current bidirectional DC-DC stage between the battery and the DC bus. Its 100V VDS rating supports the full battery voltage range including transient spikes, while its 1.5 mΩ RDS(on) maximizes round-trip efficiency of the storage system - critical where every watt of loss translates directly into reduced battery autonomy. The TOLL package's top-side cooling pad enables compact designs where the inverter must fit into a small junction box. The OptiMOS 5 technology's low gate charge also reduces switching loss at the high frequencies needed to keep magnetics small and costs down.
추천
추천 제품 요약
엔지니어링 참조 데이터: IPT015N10N5ATMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IPT015N10N5 | BSC040N10NS5ATMA1 | IPG20N10S436AATMA1 | BSC0504NSIATMA1 | BSC021N08NS5ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-HSOF-8-1 (TOLL) | PG-HSOF-8-1 (TOLL) | PG-HSOF-8-1 (TOLL) | PG-HSOF-8-1 (TOLL) | PG-HSOF-8-1 (TOLL) | PG-HSOF-8-1 (TOLL) |
| VDS Max (V) | 100 | 100 | 100 | 100 | 60 | 80 |
| RDS(on) Max (mΩ) at VGS=10V | 1.5 | 1.5 | 4.0 | 2.0 | 5.0 | 2.1 |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
주요 차별점
- Lowest RDS(on) in Infineon's OptiMOS 5 100V TOLL family (vs BSC040N10NS5ATMA1)
- 100V VDS rating optimized for 48V systems with full transient margin (vs BSC0504NSIATMA1)
- Industry-standard TOLL pinout with double-sided cooling (vs BSC021N08NS5ATMA1)
설계 노트
Estimated: At 100A continuous drain current the IPT015N10N5ATMA1 dissipates approximately 15W (P = I² × RDS(on) = 100² × 0.0015). The PG-HSOF-8-1 (TOLL) package thermal resistance must be referenced against the manufacturer datasheet's Diagram 2 for the actual case temperature in your system. For double-sided cooling, attach the exposed top pad to a copper or aluminum heat spreader using thermal interface material rated for at least 3 W/mK; without top-side cooling, derate continuous current to roughly one-third of the datasheet's 300A rating to stay within the 175°C maximum junction temperature.
Keep the high-current drain loop (drain → load → source return → source pin) as small and symmetrical as possible, and place the gate-drive loop (gate-driver output → gate resistor → gate pin → source sense return) physically inside the power loop to minimize gate-loop inductance. According to Infineon's OptiMOS 5 application notes, excessive gate-loop inductance causes VGS ringing and can exceed the ±20V VGS absolute maximum. A 10Ω gate resistor dampens the ringing without significantly slowing switching; use a TVS diode from gate to source if ringing exceeds 16V in bench characterization.
Three pitfalls are common when migrating to TOLL packages from D²PAK or SO-8. First, the top thermal pad must be soldered (or thermally connected with TIM) - a missing top-side connection raises thermal resistance by roughly 2x. Second, the source-sense connection: this part uses pins 1-3 and 5-7 as source, so the gate-driver ground must tie back to one of these pins near the gate pin to avoid source-induced gate-drive errors. Third, do not assume the 100V VDS rating is sufficient margin - in switching converters the drain can ring to 1.5-2x the bus voltage during turn-off; always measure with a scope and add a snubber or TVS if overshoot exceeds 80V in continuous operation.
규정 준수 정보
RoHS and lead-free compliance inferred from Infineon product page and distributor listings. AEC-Q100 qualification status not explicitly stated in provided web data - confirm with Infineon datasheet or factory for automotive qualification. REACH and conflict-minerals compliance are typical for major-tier MOSFET vendors.