IPW60R041C6FKSA1 vs IPP147N12N3GXKSA1 비교

다음의 상세 나란히 비교: IPW60R041C6FKSA1 제조: Infineon 및 IPP147N12N3GXKSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IPW60R041C6FKSA1 IPP147N12N3GXKSA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 NRND 활성
재고 상태 In Stock In Stock
단가 (USD) $5.40 $1.62
Technology CoolMOS™ C6 (Superjunction N-channel) OptiMOS 3 trench MOSFET
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc=25°C) 77.5 A —
Power Dissipation (PD, Tc=25°C) 481 W —
On-State Resistance (RDS(on)) 41 mΩ at VGS=10V —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V typical —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Rise Time (tr) [DATA_NEEDED: tr value] —
Fall Time (tf) [DATA_NEEDED: tf value] —
동작 온도 범위 -55°C to +150°C [DATA_NEEDED: Tj max and operating range]
패키지 PG-TO247-3-1 (TO-247-3) PG-TO220-3 (through-hole)
실장 유형 Through Hole Through Hole
MSL 레벨 Not Applicable (Through-hole) —
RoHS 상태 Compliant Compliant (per distributor listing suffixes XKSA1)
Lead-Free Yes Yes
Manufacturer — Infineon Technologies
Series — OptiMOS
트랜지스터 유형 — N-Channel MOSFET
Configuration — Single with built-in diode
Drain-to-Source Voltage (Vdss) — 120 V
Continuous Drain Current (Id) at Tc=25C — 56 A
Continuous Drain Current (Id) at Ta — 56 A (Ta, per DigiKey listing)
Power Dissipation (Pd) at Tc=25C — 107 W
핀 수 — 3 (3+Tab)
Gate Charge (Qg) — [DATA_NEEDED: typical Qg value]
Rds(on) max — [DATA_NEEDED: Rds(on) max in mOhm at Vgs=10V]
Vgs(th) (Gate Threshold) — [DATA_NEEDED: typical gate threshold voltage]
Input Capacitance (Ciss) — [DATA_NEEDED: typical Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: typical Coss]
Reverse Recovery (trr) — [DATA_NEEDED: body-diode reverse recovery time]
Avalanche Energy Rating — Single-pulse avalanche rated
Qualification — Automotive grade (per datasheet.live listing 'Automotive')
Packing Method — Tube

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