IPW60R041C6FKSA1 vs IPP147N12N3GXKSA1 Comparison
Detailed side-by-side comparison of IPW60R041C6FKSA1 by Infineon and IPP147N12N3GXKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPP147N12N3GXKSA1 - 120V 56A OptiMOS N-Channel MOSFET | Infineon
IPP147N12N3GXKSA1 β ActiveSpecification Comparison
| Parameter | IPW60R041C6FKSA1 | IPP147N12N3GXKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Nrnd | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.40 | $1.62 |
| Technology | CoolMOSβ’ C6 (Superjunction N-channel) | OptiMOS 3 trench MOSFET |
| Drain-Source Voltage (VDS) | 600 V | β |
| Continuous Drain Current (ID, Tc=25Β°C) | 77.5 A | β |
| Power Dissipation (PD, Tc=25Β°C) | 481 W | β |
| On-State Resistance (RDS(on)) | 41 mΞ© at VGS=10V | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 3.5 V typical | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | β |
| Rise Time (tr) | [DATA_NEEDED: tr value] | β |
| Fall Time (tf) | [DATA_NEEDED: tf value] | β |
| Operating Temperature Range | -55Β°C to +150Β°C | [DATA_NEEDED: Tj max and operating range] |
| Package | PG-TO247-3-1 (TO-247-3) | PG-TO220-3 (through-hole) |
| Mounting Type | Through Hole | Through Hole |
| MSL Level | Not Applicable (Through-hole) | β |
| RoHS Status | Compliant | Compliant (per distributor listing suffixes XKSA1) |
| Lead-Free | Yes | Yes |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS |
| Transistor Type | β | N-Channel MOSFET |
| Configuration | β | Single with built-in diode |
| Drain-to-Source Voltage (Vdss) | β | 120 V |
| Continuous Drain Current (Id) at Tc=25C | β | 56 A |
| Continuous Drain Current (Id) at Ta | β | 56 A (Ta, per DigiKey listing) |
| Power Dissipation (Pd) at Tc=25C | β | 107 W |
| Number of Pins | β | 3 (3+Tab) |
| Gate Charge (Qg) | β | [DATA_NEEDED: typical Qg value] |
| Rds(on) max | β | [DATA_NEEDED: Rds(on) max in mOhm at Vgs=10V] |
| Vgs(th) (Gate Threshold) | β | [DATA_NEEDED: typical gate threshold voltage] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: typical Ciss] |
| Output Capacitance (Coss) | β | [DATA_NEEDED: typical Coss] |
| Reverse Recovery (trr) | β | [DATA_NEEDED: body-diode reverse recovery time] |
| Avalanche Energy Rating | β | Single-pulse avalanche rated |
| Qualification | β | Automotive grade (per datasheet.live listing 'Automotive') |
| Packing Method | β | Tube |