IQE008N03LM5CGSCATMA1 vs IPC50N04S5L5R5ATMA1 비교

다음의 상세 나란히 비교: IQE008N03LM5CGSCATMA1 제조: Infineon 및 IPC50N04S5L5R5ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IQE008N03LM5CGSCATMA1 IQE008N03LM5CGSCATMA1 - 30V 0.85mOhm Dual N-MOSFET | Infineon

IQE008N03LM5CGSCATMA1 - 30V 0.85mOhm Dual N-MOSFET | Infineon

IQE008N03LM5CGSCATMA1 ✓ 활성

사양 비교

파라미터 IQE008N03LM5CGSCATMA1 IPC50N04S5L5R5ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $2.10 $0.36
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 —
Configuration Dual N-Channel MOSFET Array —
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) Max 252 A (per channel, case-temperature limited) —
On-Resistance (RDS(on)) Max 0.85 mOhm at VGS = 10 V —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS maximum rating] —
Gate Threshold Voltage (VGS(th)) 2 V (typ) —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
동작 온도 범위 -55C to +150C (junction) -55 °C to +175 °C
패키지 PG-WHTFN-9 (WHTFN) PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad)
실장 유형 Surface Mount (top + bottom cooling) Surface Mount
Technology Trench MOSFET (OptiMOS 5) —
Polarity N-Channel —
핀 수 9 (WHTFN with exposed thermal pads) —
MSL 레벨 1 (per JEDEC J-STD-020, typical for Infineon Power-SMD packages) —
RoHS 상태 Compliant —
할로겐 프리 Yes (Infineon standard for OptiMOS 5) —
트랜지스터 유형 — N-Channel MOSFET
Mode — Enhancement Mode
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc) — 50 A
Maximum Drain Current (silicon-limited, 25 °C) — 60 A
On-Resistance RDS(on) max @ VGS=10 V — 5.5 mΩ
Gate Threshold VGS(th) — Logic Level (enhancement at ≤ 4.5 V VGS)
Power Dissipation (Tc) — 42 W
Thermal Resistance Junction-to-Case RthJC — 3.6 K/W
AEC-Q101 Qualification — Qualified (automotive grade)
MSL (Moisture Sensitivity Level) — MSL1
Peak Reflow Temperature — 260 °C
Avalanche Rating — 100 % Avalanche Tested
RoHS / REACH — RoHS Compliant (Green Product)

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