IQE008N03LM5CGSCATMA1 vs IPC50N04S5L5R5ATMA1 Comparison
Detailed side-by-side comparison of IQE008N03LM5CGSCATMA1 by Infineon and IPC50N04S5L5R5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE008N03LM5CGSCATMA1
IQE008N03LM5CGSCATMA1 - 30V 0.85mOhm Dual N-MOSFET | Infineon
IQE008N03LM5CGSCATMA1 β ActiveInfineon
IPC50N04S5L5R5ATMA1
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΞ© OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 β ActiveSpecification Comparison
| Parameter | IQE008N03LM5CGSCATMA1 | IPC50N04S5L5R5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.10 | $0.36 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 5 | β |
| Configuration | Dual N-Channel MOSFET Array | β |
| Drain-Source Voltage (VDS) Max | 30 V | β |
| Continuous Drain Current (ID) Max | 252 A (per channel, case-temperature limited) | β |
| On-Resistance (RDS(on)) Max | 0.85 mOhm at VGS = 10 V | β |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS maximum rating] | β |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | β |
| Operating Temperature Range | -55C to +150C (junction) | -55 Β°C to +175 Β°C |
| Package | PG-WHTFN-9 (WHTFN) | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) |
| Mounting Type | Surface Mount (top + bottom cooling) | Surface Mount |
| Technology | Trench MOSFET (OptiMOS 5) | β |
| Polarity | N-Channel | β |
| Number of Pins | 9 (WHTFN with exposed thermal pads) | β |
| MSL Level | 1 (per JEDEC J-STD-020, typical for Infineon Power-SMD packages) | β |
| RoHS Status | Compliant | β |
| Halogen-Free | Yes (Infineon standard for OptiMOS 5) | β |
| Transistor Type | β | N-Channel MOSFET |
| Mode | β | Enhancement Mode |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID, Tc) | β | 50 A |
| Maximum Drain Current (silicon-limited, 25 Β°C) | β | 60 A |
| On-Resistance RDS(on) max @ VGS=10 V | β | 5.5 mΞ© |
| Gate Threshold VGS(th) | β | Logic Level (enhancement at β€ 4.5 V VGS) |
| Power Dissipation (Tc) | β | 42 W |
| Thermal Resistance Junction-to-Case RthJC | β | 3.6 K/W |
| AEC-Q101 Qualification | β | Qualified (automotive grade) |
| MSL (Moisture Sensitivity Level) | β | MSL1 |
| Peak Reflow Temperature | β | 260 Β°C |
| Avalanche Rating | β | 100 % Avalanche Tested |
| RoHS / REACH | β | RoHS Compliant (Green Product) |