IQE013N04LM6ATMA1 vs IQEH68NE2LM7UCGATMA1 비교
다음의 상세 나란히 비교: IQE013N04LM6ATMA1 제조: Infineon 및 IQEH68NE2LM7UCGATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IQE013N04LM6ATMA1 - 40V 1.35mΩ OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 ✓ 활성사양 비교
| 파라미터 | IQE013N04LM6ATMA1 | IQEH68NE2LM7UCGATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.71 | $1.35 |
| Technology | OptiMOS N-channel trench MOSFET | OptiMOS 7 trench MOSFET |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 25 V |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (Ta) | 31 A | — |
| Continuous Drain Current (Tc) | 205 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 107 W | — |
| On-Resistance RDS(on) max | [DATA_NEEDED: RDS(on) max value at VGS=10V] | — |
| On-Resistance RDS(on) typ | 1.35 mΩ @ VGS=10 V, ID=20 A | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | — |
| 패키지 | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down | PG-TTFN-9-3 (surface mount) |
| 동작 온도 범위 | -55 °C to +175 °C | -55 °C to +175 °C (typical for OptiMOS 7) |
| 실장 유형 | Surface Mount | Surface Mount |
| RoHS 상태 | Compliant | Compliant (per distributor listing) |
| Source-Down Topology | Yes (flip-chip die attach, drain on top thermal pad) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 7 |
| 트랜지스터 유형 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) @ Ta | — | 47 A |
| Pulsed Drain Current (IDM) @ Tc | — | 338 A |
| Power Dissipation (PD) @ Ta | — | 2.5 W |
| Power Dissipation (PD) @ Tc | — | 130 W |
| Gate Threshold Voltage Type | — | Logic-level (per OptiMOS 7 family) |
| On-Resistance Family | — | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) |
| Maximum Junction Temperature | — | 175 °C |
| MSL 레벨 | — | [DATA_NEEDED: MSL Level] |
| Packaging | — | Tape & Reel (per ATMA1 suffix) |