IQE018N06NM6CGATMA1 vs IQE008N03LM5CGATMA1 비교

다음의 상세 나란히 비교: IQE018N06NM6CGATMA1 제조: Infineon 및 IQE008N03LM5CGATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IQE018N06NM6CGATMA1 IQE018N06NM6CGATMA1 - 60V 178A OptiMOS 6 N-MOSFET | Infineon

IQE018N06NM6CGATMA1 - 60V 178A OptiMOS 6 N-MOSFET | Infineon

IQE018N06NM6CGATMA1 ✓ 활성

사양 비교

파라미터 IQE018N06NM6CGATMA1 IQE008N03LM5CGATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.21 $0.74
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 60V OptiMOS 5
Channel Type N-Channel —
Drain-Source Voltage (V_DS) 60 V —
Continuous Drain Current (I_D, Tc) 178 A —
Continuous Drain Current (I_D, Ta) 25 A —
R_DS(on) max (V_GS=10 V) 1.8 mΩ —
Gate Threshold Voltage (V_GS(th)) 3.3 V (logic-level compatible) —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 125 W —
패키지 PG-TTFN-9-3 (TOLL/TTFN) PG-TTFN-9-1 (8-PowerTDFN) with wettable flanks
실장 유형 Surface Mount Surface Mount
동작 온도 범위 -55C to +175C (junction) -55C to +150C (junction)
Technology Trench MOSFET, OptiMOS 6 —
RoHS Compliance Compliant —
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta=25C — 27 A
Continuous Drain Current (ID) at Tc=25C — 253 A
On-Resistance (RDS(on)) at VGS=10V — 0.85 mOhm (typ) @ 20 A
Gate-Source Voltage (VGS) Max — +/-16 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
Total Gate Charge (Qg) at VGS=10V — 64 nC (typ)
Input Capacitance (Ciss) at VDS=15V — 5700 pF (typ)
Output Capacitance (Coss) — [DATA_NEEDED: Coss typical]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: Crss typical]
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 89 W
Lead-Free / RoHS — Yes (compliant per Infineon product page)
AEC-Q100 Automotive — [DATA_NEEDED: AEC-Q100 qualification status]

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