IR2110SPBF vs IR2010SPBF 비교

다음의 상세 나란히 비교: IR2110SPBF 제조: Infineon 및 IR2010SPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IR2110SPBF IR2010SPBF
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.98 $1.20
기능 Half-bridge gate driver —
토폴로지 High-side and low-side referenced output channels —
Number of Channels 2 (1 high-side, 1 low-side) —
Logic Type Non-inverting —
Maximum Offset Voltage (Voffset) 500 V —
Gate Drive Supply Voltage (Vcc/VCC) 10 V to 20 V —
Peak Output Current (source/sink) 2.0 A / 2.0 A —
Typical Propagation Delay (ton/toff) 94 ns / 94 ns —
Rise/Fall Time (typical) 25 ns / 17 ns —
Logic Input Compatibility 3.3 V CMOS / LSTTL CMOS or LSTTL, down to 3.0 V
Bootstrap Diode Integrated —
Undervoltage Lockout (UVLO) Yes, both Vcc and VCC —
동작 온도 범위 -40 C to +125 C —
패키지 16-pin SOIC (SO-16, DW suffix) 16-SOIC (SOIC-16)
실장 유형 Surface Mount Surface Mount
Technology HVIC + latch-immune CMOS —
Lead-Free / RoHS Yes / Compliant (Pb-free PBF suffix) —
Configuration — Half-Bridge (high + low side)
Number of Drivers — 2 (independent high/low-side outputs)
Offset Voltage (max) — 200 V
Peak Source/Sink Current — 3 A / 3 A
Propagation Delay (typ) — 95 ns
Rise / Fall Time (typ) — [DATA_NEEDED: rise/fall time]
VCC Supply Voltage (low side) — 10 V to 20 V
VB Bootstrap Supply (high side) — VCC + 10 V to VCC + 20 V
동작 온도 — -40C to +150C
Shutdown Feature — Yes (active input)
MSL 레벨 — [DATA_NEEDED: MSL rating]
RoHS 상태 — Compliant (Pb-free PBF suffix)
Drive Technology — High-speed power MOSFET / IGBT driver
Channel Matching — Matched propagation delays for cross-conduction minimization

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