IR2110SPBF vs IR2010SPBF Vergleich

Detaillierter Direktvergleich von IR2110SPBF von Infineon und IR2010SPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IR2110SPBF IR2010SPBF
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,98 $1,20
Funktion Half-bridge gate driver —
Topologie High-side and low-side referenced output channels —
Number of Channels 2 (1 high-side, 1 low-side) —
Logic Type Non-inverting —
Maximum Offset Voltage (Voffset) 500 V —
Gate Drive Supply Voltage (Vcc/VCC) 10 V to 20 V —
Peak Output Current (source/sink) 2.0 A / 2.0 A —
Typical Propagation Delay (ton/toff) 94 ns / 94 ns —
Rise/Fall Time (typical) 25 ns / 17 ns —
Logic Input Compatibility 3.3 V CMOS / LSTTL CMOS or LSTTL, down to 3.0 V
Bootstrap Diode Integrated —
Undervoltage Lockout (UVLO) Yes, both Vcc and VCC —
Betriebstemperaturbereich -40 C to +125 C —
Gehäuse 16-pin SOIC (SO-16, DW suffix) 16-SOIC (SOIC-16)
Montageart Surface Mount Surface Mount
Technology HVIC + latch-immune CMOS —
Lead-Free / RoHS Yes / Compliant (Pb-free PBF suffix) —
Configuration — Half-Bridge (high + low side)
Number of Drivers — 2 (independent high/low-side outputs)
Offset Voltage (max) — 200 V
Peak Source/Sink Current — 3 A / 3 A
Propagation Delay (typ) — 95 ns
Rise / Fall Time (typ) — [DATA_NEEDED: rise/fall time]
VCC Supply Voltage (low side) — 10 V to 20 V
VB Bootstrap Supply (high side) — VCC + 10 V to VCC + 20 V
Betriebstemperatur — -40C to +150C
Shutdown Feature — Yes (active input)
MSL-Level — [DATA_NEEDED: MSL rating]
RoHS-Status — Compliant (Pb-free PBF suffix)
Drive Technology — High-speed power MOSFET / IGBT driver
Channel Matching — Matched propagation delays for cross-conduction minimization

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