IR21271STRPBF vs IRS2008STRPBF 비교

다음의 상세 나란히 비교: IR21271STRPBF 제조: Infineon 및 IRS2008STRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IR21271STRPBF IRS2008STRPBF
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.82 $0.33
Configuration High-Side or Low-Side —
출력 수 1 2 (high-side + low-side)
Input Polarity Non-Inverting —
Supply Voltage (VCC) 9 V to 20 V —
High-Side Offset Voltage 600 V max —
Peak Source Current 250 mA —
Peak Sink Current 500 mA —
Propagation Delay 200 ns typical —
상승 시간 [DATA_NEEDED: rise time] —
하강 시간 [DATA_NEEDED: fall time] —
동작 온도 -40C to +125C -40 C to +125 C (industrial)
패키지 8-SOIC (3.90 mm) 8-SOIC (SOIC N), 3.90 mm body width
실장 유형 Surface Mount Surface Mount (Tape & Reel)
Lead-Free / RoHS Yes (Pb-Free, suffix PBF) —
Integrated Current Sense Yes (CS pin + shutdown) —
dV/dt Immunity Yes —
Negative Transient Tolerance Yes (high-side rail) —
Manufacturer — Infineon Technologies
Part Number — IRS2008STRPBF
기능 — Half-Bridge Gate Driver
Driven Configuration — Half-Bridge (High-Side + Low-Side, synchronous)
Channel Type — Synchronous (independent inputs)
출력 유형 — Non-Inverting
Logic Input Compatibility — TTL/CMOS
Input Voltage (VCC) — 10 V to 20 V (per datasheet family)
Maximum Offset Voltage (Voffset) — 200 V
Source Current (typ.) — 0.29 A
Sink Current (typ.) — 0.6 A
Rise Time (typ.) — [DATA_NEEDED: rise time ns]
Fall Time (typ.) — [DATA_NEEDED: fall time ns]
Propagation Delay (typ.) — [DATA_NEEDED: propagation delay ns]
VCC UVLO Threshold — Yes (per datasheet family)
VBS UVLO Threshold — Yes (per datasheet family)
Shutdown Pin (SD) — Yes (active logic-level shutdown)
Lead Finish — Matte Tin (lead-free)
RoHS 상태 — Compliant
MSL 레벨 — [DATA_NEEDED: MSL rating]

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