IR2304STRPBF vs IR2101STRPBF 비교

다음의 상세 나란히 비교: IR2304STRPBF 제조: Infineon 및 IR2101STRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IR2304STRPBF IR2101STRPBF
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.39 $0.68
기능 Half-bridge gate driver —
Configuration High-side and low-side (half-bridge) Half-Bridge (High-Side and Low-Side), Independent
출력 수 2 —
Logic Input Non-inverting, single input —
Supply Voltage (VCC) 10 V to 20 V —
Offset Voltage (Voffset) Up to 600 V —
Output Source Current (typ.) 0.29 A —
Output Sink Current (typ.) 0.6 A —
Propagation Delay (typ.) 220 ns (turn-on and turn-off, matched) —
Rise / Fall Time [DATA_NEEDED: rise/fall time] —
Deadtime Integrated (matched delay, prevents shoot-through) —
Input Logic Compatibility 3.3 V CMOS / LSTTL —
dV/dt Immunity Yes (high-side channel) —
Negative VS Transient Tolerance Yes —
동작 온도 -40C to +125C -40 C to +125 C
패키지 8-SOIC (3.90 mm body width) 8-SOIC (0.154 inch, 3.90 mm Width)
실장 유형 Surface Mount Surface Mount
RoHS 상태 PbF suffix indicates lead-free / RoHS compliant Compliant
Packaging Tape and Reel (TR) —
Number of Drivers — 2
Driver Type — Non-Inverting
Maximum Offset Voltage — 600 V
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Source Current (Typ.) — 210 mA
Sink Current (Typ.) — 360 mA
Propagation Delay (Typ.) — 160 ns
Rise Time (Typ.) — [DATA_NEEDED: rise time]
Fall Time (Typ.) — [DATA_NEEDED: fall time]
Logic Input Compatibility — 3.3 V / 5 V / 15 V CMOS/LSTTL
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — Yes (VCC and VBS)
Negative Transient Immunity on VS — Yes (dV/dt immune)
MSL 레벨 — MSL 3

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